BEST MODES FOR CARRYING OUT THE INVENTION

[0018] As described above, the present invention provides an interconnect frame for a T/R module that transmits and receives electromagnetic radiation over a predetermined portion of the electromagnetic spectrum. The principles of the present invention are described below in connection with a generic configuration for a T/R module configured to transmit and receive RF signals. However, from the description, it will be clear how the present invention can be applied to various types of T/R modules will be apparent to those in the art.

[0019] FIG. 1 schematically illustrates essential components of a three-dimensional (3D) T/R module 100 having an interconnect frame according to the principles of the present invention. The T/R module 100 comprises a pair of T/R circuit components 102 , 104 , and an interconnect frame 106 disposed between the T/R circuit components. Each of the T/R circuit components 102 , 104 can be, e.g., a Monolithic Microwave Integrated Circuit (MMIC) type, with a gallium arsenide (GaAs) semiconductor. The interconnect frame 106 is formed according to the principles of the present and includes a plurality of electrical connectors 112 which interconnect the T/R circuit components 102 , 104 . In a 3D tile T/R module, there may be additional circuit components, and additional electrical connectors interconnecting those circuit components, or providing input/output (I/O) connections for the module, as will be apparent to those in the art.

[0020] The interconnect frame 106 is formed by a pair of frame components 108 , 110 (see also FIGS. 2, 3 , and 5 ), each of which formed as a single piece (e.g., as a molded article) from a synthetic resin dielectric material. Preferably, each frame component is injection molded from a synthetic resin sold under the registered mark VECTRA® (which is registered to Celanese Corporation, New York, N.Y.), and which resin is capable of being injection molded, extruded, thermo-formed and machined for various high performance plastic applications. For the current embodiment, molded materials can be selected for dielectric constant and loss tangent, based on the particular RF application. The frame components have less weight than metal frame components, and are more cost effective to produce than metal frame components. Additionally, by forming the frame components as single piece structures, the number of parts required to form an interconnect frame for a T/R tile module is significantly reduced, in comparison to the number of parts required to form a metal interconnect frame for such a module.

[0021] Each of the frame components 108 , 110 is configured to support a respective portion of a plurality of the electrical connectors 112 which extend between the T/R circuit components 102 , 104 ( FIGS. 2 and 5 ). Each frame component 108 , 110 includes a plurality of apertures 111 ( FIGS. 2, 3 , and 5 ), each of which is preferably cylindrical, and each of which is configured to support a respective portion of a single electrical connector 112 . When the pair of frame components 108 , 110 supports a plurality of electrical connectors 112 , the electrical connectors extend through the pair of frame components, and engage respective portions of the T/R circuit components 102 , 104 . Compliant conductive contact concepts, known to those in the art as Pogo Pins and Fuzz Buttons, are used to provide compliant connections between the electrical conductors and the T/R circuit components.

[0022] In a T/R tile module with an interconnect frame according to the present invention, a portion of each of the frame component is configured to interface with a portion of a respective transmit/receive module component when the frame component is incorporated into the transmit/receive module. As seen in FIGS. 1 and 5 , the frame components are designed for effective contact with portions of the T/R modules, and one purpose of such contact is to enable the frame components to provide effective ground connection for the T/R module circuit components. The synthetic resin dielectric material provides each of the frame components with a range of compressibility such that effective ground connection with the circuit components of the T/R tile module can be made with a frame component that is up to 5 to 7 mils out of flat. Such compressibility enables the frame components to provide the module with an effective ground connection over that range of compressibility.

[0023] Each of the frame components 108 , 110 has a thin film coating 114 ( FIGS. 4 and 5 ) configured to provide a ground connection and EMI shield when the frame structure is incorporated into a T/R tile module. The EMI shield is provided between multiple channels within a single module and between transmit and receive paths within a single channel. The thin film coating 114 is preferably formed in accordance with U.S. patent application Ser. No. 09/965,759, filed Sep. 22, 2001, which is incorporated herein by reference. (A copy of application Ser. No. 09/965,759 is attached hereto has Exhibit A.) The thin film coating 114 is schematically illustrated in FIG. 4 , and includes (i) a metal layer 116 (formed e.g., of aluminum or copper) that provides a ground connection and EMI shield, (ii) a thin layer of connective (adhesion) material 118 (e.g., a 20 nm thick layer of titanium) connecting the metal layer 116 to the frame component 108 , 110 , (iii) a getter layer 120 (e.g., a titanium getter layer in a thickness of about 40 to 80 micro inches) for materials (e.g., hydrogen) that can contaminate high performance GaAs in a T/R module), and (iv) a palladium layer 122 (about 8 micro inches thick) on top of the getter layer 120 . The palladium layer prevents oxidation of the getter layer 120 , while allowing hydrogen to pass through to the getter layer.

[0024] The thin film hydrogen getter/EMI shield comprises a vacuum deposited multilayer film as shown in FIG. 4 . The EMI film is a thin (e.g., 20 nm or 100 to 250 Ångstrom thick) Ti adhesion layer 118 followed by an aluminum (Al) (or copper) layer 116 that is 100 to 200 micro inches thick, which provides 5 to 6 skin depths for wave propagation. The getter layer 120 comprises a 40 to 80 micro inch thick titanium (Ti) layer, covered with an 8 micro inch palladium (Pd) layer 122 . All layers are deposited during the same processing run at a vacuum of about 10 −6 Torr. The thin film is particularly useful with frame components formed of dielectric materials, and designed for use in microelectronic modules containing GaAs devices. An alternate film structure is one in which the high conductivity Al film is replaced by electroless metal. In this case, the titanium adhesion layer is deleted. Subsequently, the getter and palladium films are deposited using the aforementioned evaporation process.

[0025] With an interconnect frame with the foregoing thin film coating, it is expected that hydrogen should not desorb from titanium for temperatures below 500° C. Additionally, the pumping speed is proportional to getter surface area, the presence of helium and nitrogen doesn't impede the sorption of hydrogen by the getter, and hydrogen pumping speed increases with temperature, and all of the foregoing features are useful in a thin film coating for an interconnect frame. In addition, with the foregoing frame structure, it is believed that the cost of the interconnect frame can be significantly reduced in comparison to an all metal interconnect frame. Finally, as can be seen from the foregoing description, the interconnect frame comprises relatively few components in comparison to an all metal frame, which is a significant factor in the construction of high precision frames for high performance T/R modules.

[0026] Moreover, the foregoing thin film is believed to provide the following features which are useful in an interconnect frame designed for a high performance T/R tile module environment: (i) high hydrogen pumping speeds (0.15 cc/sec per cm 2 at 23° C.), (ii) the hydrogen removal rate of the thin film getter when the hydrogen pressure at 1 Torr is 2×10 −4 standard cc of hydrogen per second, which is 1000 times faster than worst case hydrogen evolution rate in a hermetically sealed package, (iii) the hydrogen capacity is 135 Torr·cc per mg of titanium, which is high since the thin film only needs to absorb about 75 Torr·cc of H 2 over the lifetime of the T/R module, (iv) hydrogen pumping speed remains relatively high for temperatures down to 0° C. (the pumping speed at 0° C. is 30% of its value at room temperature), and (v) with the highly conductive sub layer film or metal deposits which provide ground connections for the T/R module as well as EMI shielding for use on dielectric packaging materials 5 to 6 skin depths are easily provided for low resistance wave propagation.

[0027] Thus, as seen from the foregoing description, the present invention provides a cost effective 3D interconnect for tile modules which will provide a hydrogen free environment for highly reliable GaAs based T/R modules. With the foregoing disclosure in mind, there will be other modifications and developments that will be apparent to those in the art.