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[0001] Q-switching is a method for obtaining single laser pulses of very high power by protracting the period of population inversion of electrons in excited states just prior to emission. Extending the period of population inversions typically can be achieved acousto- or electro-optically by use of shutters, mechanically (with an orthogonal mirror or rotating mirror), or by use of saturable absorbers (in the form of dyes or doped crystals).
[0002] The term “Q-switching” is a reference to the fact that a “Q-factor” or “Quality factor,” which can be defined as v/Δv
[0003] Saturable absorber Q-switches operate passively, whereby absorptivity of the laser wavelength decreases with increasing irradiance until “bleaching” occurs. Population inversion increases until the Q-switch is bleached, at which time the threshold value is reduced, resulting in a laser pulse. Passive Q-switches typically are easy to implement relative to other mechanisms. Historically, examples of saturable absorber Q-switches are dyes, such as bis 4-dimethyl aminodithiobenzyl-nickel (BDN) dissolved in 1,2 dichloroethane for Nd:YAG lasers, and gases, such as SF
[0004] More recently, solid state Q-switches have been employed that include crystals doped with tetrahedrally coordinated Co
[0005] Therefore, a need exists to significantly diminish or eliminate the above-mentioned problems of cobalt-doped saturable absorber Q-switches.
[0006] This invention is directed to a cobalt-doped saturable absorber Q-switch, to a laser system that employs a cobalt-doped saturable absorber Q-switch, and to a method of forming a cobalt-doped saturable absorber Q-switch.
[0007] In one embodiment, the saturable absorber Q-switch includes a monocrystalline lattice having the formula Mg
[0008] In a laser system of the invention, a laser resonator cavity has a resonant axis and a lasing element within the resonator cavity. Suitable means optically pump the lasing element. A saturable absorber Q-switch lies along the resonant axis of the laser resonator cavity. The Q-switch includes a monocrystalline lattice having a formula Mg
[0009] A method of forming a monocrystalline lattice of a saturable absorber Q-switch of the invention includes forming a melt of magnesium, cobalt, aluminum and oxygen, wherein the molar ratio of magnesium:cobalt:aluminum is (1-x):x:y, where x is greater than 0 and less than about 1, and y is greater than 2 and less than 8. A spinel seed crystal is immersed in the melt and rotated at a rate in a range of between about 4 and about 12 revolutions per minute, while withdrawing the seed crystal from the melt at a rate in a range of between about 0.04″/hr and about 0.1″/hr to thereby form the monocrystalline lattice. In one embodiment, the melt is formed by combining MgO, Co
[0010] The present invention has several advantages. For example, the saturable absorber Q-switch of the invention includes a ratio of aluminum to magnesium that is greater than that of spinel (MgAl
[0011]
[0012]
[0013]
[0014]
[0015]
[0016]
[0017] The features and other details of the invention will now be more particularly described with reference to the accompanying figures and pointed out in the claims. It will be understood that the particular embodiments of the invention are shown by way of illustration and not as limitations of the invention. The principal features of this invention can be employed in various embodiments without departing from the scope of the invention.
[0018] In one embodiment, the invention is a laser system that employs a saturable absorber Q-switch having a monocrystalline lattice, wherein the monocrystalline lattice has a formula of Mg
[0019] An example of a laser system of the invention is shown in
[0020] A suitable means for optically pumping the lasing element, optical pump
[0021] Q-switch
[0022] In one embodiment of the invention, the monocrystalline lattice has a value of z of about 4. In another embodiment, y is about 4 and z is about 7. In still another embodiment, y is about 6 and z is about 10. Generally, the saturable absorber Q-switch has a
[0023] In another preferred embodiment, such as wherein the lasing element is a Nd
[0024] In one embodiment, the excited state absorption for the cobalt ion in the saturable absorber Q-switch of the invention is about the same as that of a saturable Q-switch absorber wherein a molar ratio of aluminum to the combined magnesium and cobalt amount is about 2. Generally, the unit cell dimension of the monocrystalline lattice will be less than about 8.085 Å. In a preferred embodiment, the unit cell dimension is between about 7.970 Å and about 8.083 Å. In still another embodiment, the saturable absorber Q-switch of the invention has a decay time (τ
[0025] Typically, the amount of cobalt ion in the saturable absorber Q-switch of the invention is greater than about 0.02 atomic percent. Preferably, the amount of cobalt ion present is in an amount in a range of between about 0.02 and about 0.043 (atomic?) weight percent of the monocrystalline lattice.
[0026] The saturable absorber Q-switches of the invention can be formed by use of a spinel seed (MgAl
[0027] The spinel seed is immersed into the molten mixture and rotated while being withdrawn from the growth medium at a controlled rate. In one embodiment, the withdrawal rate is in a range of between about 0.25 and about 1.0 millimeters per hour at a rotation speed in a range of between about 4 and about 12 revolutions per minute (RPM). Preferably, the withdrawal rate is about 1 millimeter per hour and the rotation of the seed is about 8 RPMs. Crystal growth continues for a suitable period of time to form a monocrystalline lattice of suitable dimension. In one embodiment, crystal growth is continued for a period of about 150 hours. Thereafter, the crystal is cooled to about 25° C. over a period of time in a range of between about 72 and about 100 hours. Preferably, the crystal is cooled from the melt temperature, of about 2150° C. to about 25° C. over a period of time of about 100 hours. Thereafter, the crystal can be machined by known methods to form the saturable absorber Q-switch of the invention.
[0028] The invention is illustrated by the following examples, which are not intended to be limiting in any way.
[0029] The various cobalt doped spinel compositions were grown on 1:1 (MgAl
[0030] Composition
[0031] 206.05 gms of MgO
[0032] 0.41 gms of Co
[0033] 1043.54 gms of Al
[0034] The composition was mixed and loaded into 3″ diameter 4-½″ tall iridium crucible of 440 ml volume. The crucible was placed into growth system comprising RF (radio frequency), generator (power) supply, a growth chamber containing the RF coupling coil, zirconium oxide insulation material in an ambient gas enclosure—“Bell Jar,” and an electronic control system. Control was accomplished by controlling the RF generator output in response to the mass of the growing crystal. “ADC” (Automatic Diameter Control) software, supplied by F. Bruni, controlled the shape of growing crystal, temperature increase, and cool down rates, and all other pertinent parameters. The crucible with the oxide mixture was heated to 2150° C. to form a melt. <111> spinel “seed” (small rod-shaped crystal) was immersed (dipped) into the molten mixture. Applying a withdrawal rate of 1 mm/hr along with rotation of the seed at 8 rpm, the crystal growth was started. Growth continued for 150 hours followed by a 100 hour cool down period.
[0035] Result: A blue crystal, “Spinel” crystal structure, ¼″ diameter, 7″ long A
[0036] Composition
[0037] 141.56 gms of MgO
[0038] 0.87 gms of Co
[0039] 1107 gms of Al
[0040] The composition was loaded into same crucible as described in Example #1, and placed in an identical growth system. Heat-up time was 6 hours to 2150° C. Rotation rate applied was 8 rpm, pull rate 1 mm/hr under strictly inert atmosphere. Growth time of 150 hours was followed by a 100 hour cool-down period. Grown crystal was harvested at room temperature.
[0041] Result: A blue crystal
[0042] Structure: “Spinel”
[0043] A
[0044] Optical Density: 2.4 cm
[0045] Composition
[0046] 353.68 gms of MgO
[0047] 0.70 gms of CO
[0048] 895.62 gms of Al
[0049] Raw materials were mixed and loaded into an iridium crucible. The crucible was placed in the previously described system. Temperature was increased over a period of 6 hours to 2150° C. to complete melting. <111> spinel seed was immersed (dipped) into the melt. A withdrawal rate of 1 mm/hr, crystal growth was started. Growth continued for 150 hours followed by a 100 hour cool down period.
[0050] Result: A single crystal spinel ¼″ diameter, 7″ long
[0051] Structure: “Spinel”
[0052] Optical Density: 0.63 cm
[0053] Experimental Details
[0054] Crystals of MgAl
[0055] Polished samples used in spectroscopic measurements ranged from circular disks 4 cm in diameter and 0.5 cm thick, to rectangular pieces for low-temperature studies that measured 10 mm by 5 mm by 2.15 mm thick. Crystals having the optimum optical density at 1.54 μm were examined for use as saturable absorbers. Room temperature absorption spectra were obtained between 3000 nm and 300 nm with a Perkin-Elmer Lambda-nine spectrophotometer. Calibration of the instrument over the wavelength of interest indicated that spectral lines and bands were measured to an accuracy of 0.22 nm. The low temperature (8K) absorption spectrum was obtained with an upgraded Cary Model 14R spectrophotometer controlled by a desktop computer. The spectral bandwidth was set at 0.5 nm and the instrument was internally calibrated to an accuracy of 0.3 nm. Spectra were analyzed and plotted by using the computer software program Sigma Plot. Fluorescence spectra at room temperature and at 8K were also obtained by using the instrument together with appropriate mirrors and filters and a Spex Model 340 E monochromator. For fluorescence studies, excitation at 514.5 nm was provided by an argon ion laser.
[0056] For low-temperature studies, the sample was mounted at the cold finger of a CTI Model-22 closed-cycle helium cryogenic refrigerator capable of operation between 8K and room temperature. The sample temperature was monitored with a silicon-diode sensor attached to the base of the sample holder and maintained by using a Lake Shore control unit.
[0057] The fluorescence lifetime of the strongest emission band centered between 650 nm and 700 nm was measured by exciting each sample with the second harmonic (532 nm) of a Quanta-Ray pulsed Nd:YAG laser Model GCR-12S. The pulse width was about 6 ns and the beam divergence was less than 0.5 μrad. The output energy was 15 mJ at 10 Hz. The signal was detected by a photomultiplier tube attached to the exit slit of the monochromator and sent to a 150 MHZ Tektronix oscilloscope Model 2445A having a resolution of 10 ns.
[0058] Observed Spectra
[0059] The room temperature absorption spectrum of Co
[0060] The similarity in the room temperature spectra of the three samples led us to examine the details of the absorption spectrum for Co
[0061] The fluorescence spectra at 8K and at 300K were characterized by a strong emission band between 600 nm and 700 nm. As can be seen in
[0062] The room temperature fluorescence of the Co
[0063] Energy Levels of Co
[0064] The absorption spectra of Co
[0065] where F
[0066] where the B
[0067] Matrix elements for the Hamiltonian were computed using coefficients of fractional parentage for the 3d
TABLE I Room temperature absorption bands of Co MgAl MgAl MgAl STATE λ (nm) α E (cm λ (nm) α (cm E (cm λ (nm) α (cm E (cm 2519 0.03 3970 2556 0.04 3912 2580 0.05 3870 2448 0.03 4085 2476 0.04 4039 2500 0.04 4000 ( 2365 (sh) 0.05 4228 2390 (sh) 0.05 4184 2252 0.05 4441 2279 0.07 4388 2300 0.09 4347 2163 0.03 4623 2190 (sh) 0.05 4566 2220 (sh) 0.06 4505 1536 5.21 6510 1537 5.78 6506 1544 5.91 6476 ( 1417 4.82 7057 1450 5.12 6897 1460 (sh) 5.32 6849 1350 5.03 7407 1360 5.32 7353 1365 5.50 7326 1229 4.36 8137 1234 4.72 8104 1238 4.50 8077 671 1.36 14900 672 1.28 14880 675 1.31 14815 4T 625 16.3 16000 626 14.3 15974 628 15.6 15923 ( 598 15.9 16722 599 14.7 16694 598 15.2 16700 580 17.1 17241 581 16.0 17211 583 17.2 17150 545 2.8 18343 545 2.8 18348 546 2.6 18315 ( 475 0.8 21053 476 0.7 21008 476.5 0.8 20986 (
[0068]
TABLE II Absorption spectra of Co MgAl E (cm Level State λ (nm) α (cm E (cm Calc. Mixture SL States 1 4A 0 −7 1.00 2 ( −2 1.00 3 2590 vwk 3861 3728 0.98 4 ( 2500 (b) vwk 4000 4019 0.99 5 2400 (b) vwk 4166 4146 0.99 6 4411 0.99 7 2231.5 1.11 4481 4544 0.99 8 2110 vwk 4739 4713 0.99 + 9 1539 5.33 6498 6479 0.91 10 ( 1460 (sh) 4.82 6849 6854 0.86 11 1337 5.24 7479 7507 0.99 12 7925 0.95 13 1241 4.17 8058 8065 0.91 14 1230 (sh) 3.82 8130 8119 0.97 15 673 1.12 14860 14877 0.39 16 ( 670 (sh) 1.00 14925 14913 0.56 17 Band 3.0 15267 15246 0.65 18 ( Band un- 15356 0.45 resolved band 19 Band 15357 0.66 20 Band 15690 0.49 21 15718 0.48 22 621 15.07 16103 16167 0.90 23 605 16.1 16529 16451 0.67 24 598 17.40 16722 16696 0.82 25 583 (b) 18.1 17150 16852 0.70 26 552 (sh) 11.0 18116 18080 0.65 27 ( 546 9.3 18315 18286 0.85 28 18389 0.87 29 Band 18746 0.63 30 19831 0.42 31 500 0.7 20000 19870 0.43 32 490 (sh) 0.50 20408 20494 0.62 33 ( 476.5 0.60 20986 20862 0.34 34 21476 0.45 35 ( 21906 0.41
[0069]
TABLE III Spectroscopic parameters for Co MgAl MgAl MgAl Initial Final Initial Final Initial Final value Value Value Value Value Value Parameter (cm (cm (cm (cm (cm (cm F 59367 59746 60520 61050 61045 61542 F 42210 41946 41843 41325 41705 40168 B 2720 2566 2641 2814 3119 3949 B −8640 −8693 −8714 −8920 −9267 −9081 B 5163 5120 5092 5040 5171 5242 ζ 420 420 537 537 515 515 α 86 86 108 108 108 108
[0070] Modeling of Crystals as Saturable Absorbers
[0071] Co
[0072] The 1:3 material is a better performer as a saturable absorber than 1:1 and 1:2 spinels given comparable Co
[0073] In summary, all members of the series may prove to be efficient high performance absorbers for Q-switching at the 1:54 μm wavelength.
[0074] Equivalents
[0075] While this invention has been particularly shown and described with references to preferred embodiments thereof, it will be understood by those skilled in the art that various changes in form and details may be made therein without departing from the scope of the invention encompassed by the appended claims.