DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0044] The following detailed description includes many specific details. The inclusion of such details is for the purpose of illustration only and should not be understood to limit the invention. Throughout this discussion, similar elements are referred to by similar numbers in the various figures for ease of reference. In addition, features in one embodiment may be combined with features in other embodiments of the invention.

[0045] A process control system, such as a semi-conductor fabrication plant, may include process tools each perhaps with multiple chambers, wherein each of the chambers is intended to work in parallel on a stream of products, to produce essentially identical products or products where at least some of the processing is essentially identical. One or more embodiments of the present invention concern matching (e.g., imparting the behavior information of one component to another component) between one or more comparably configured components (e.g., chambers on one or more process tools) where products are processed in parallel. One or more embodiments of the present invention also provides for matching where the products are processed at different times, perhaps on the same or different process tool(s). The designation “parallel” is used to indicate that two (or more) streams of products are being subjected to at least some comparable processing (e.g., parallel assembly lines), whether at more or less the same time or at different times.

[0046] FIGS. 1 and 2 are block diagrams illustrating process tools 101 , 201 . Each has multiple chambers 103 , each of which may process one or more wafers. The process tool 101 in FIG. 1 has a separate, stand alone metrology tool 105 .

[0047] A batch of wafers processed by the process tool 101 is measured by the metrology tool 105 for specification compliance after processing of the batch is completed. On the other hand, the process tool 201 of FIG. 2 incorporates a metrology tool 203 ; wafers may be measured by the incorporated metrology tool 203 as they are processed in the process tool 201 without necessarily awaiting completion of processing on the batch.

[0048] With some process control to control and/or coordinate the configuration of the chambers 103 , matching of the desired configurations and/or output of the chambers 103 becomes possible. The closer that the process control is integrated into the processing, the faster the chambers 103 can be matched. The ability to control the configuration of chambers 103 , regardless of the tool 101 , 201 on which they are located, renders the tool 101 , 201 essentially invisible to the process of chamber matching.

[0049] FIGS. 3 and 4 illustrate process tools 301 , 401 with advanced process control (APC) 303 (or some portion thereof) integrated therein. Chamber matching can be done on the process tool 301 in FIG. 3 on a run-to-run basis, since the metrology tool 105 is separate. However, for the process tool 401 with integrated metrology tool 203 , matching may be done on a wafer-to-wafer basis because each wafer may be measured after processing (if desired) and the result of the measurement may be used to adjust the recipe and/or model parameters for subsequent wafers.

[0050] Reference is made to FIGS. 5 and 6 . Alternatively, the system can match one or more comparably configured chambers on different tools; or some combination thereof. Consider an example of two copies of the same tool, 301 , 401 each having one or more particular chemical vapor deposition (CVD) chambers 103 running a particular CVD process. The present invention according to one or more embodiments will match the performance of one or more of those chambers, even though they may be on different tools. The chambers are configured in a comparable way, so that in respect to their portion of processing on the intended product, each is intended to produce an “identical” (considering tolerances) result. The chambers are “identical” in that they are supposed to perform the same processing, optionally, in a physically different tool. In essence, there are multiple copies of the same tool and/or chamber working in parallel on different batches of chips.

[0051] The match could be at the chamber level or it could be at the tool level. That is, it could be matching just a chamber, it could be matching any two or more chambers on the same tool or any two or more chambers on different tools or the same chamber on the same tool at a later time, providing they are the same kind of chamber running the same kind of process. Also, one can match the whole tool performance to two (or more) separate tools of the same type, provided they are identical copies.

[0052] Reference is made to FIG. 5 , one example of where chamber matching may be done on a batch basis. The system will process a batch of wafers in one of the chambers 103 on the process tool 301 , and take them out of the process tool 301 to a stand alone metrology tool 105 , measure them, and enter the measurement results into the APC 303 software. The APC 303 software will determine any adjustments to be made, provide a modified recipe for the next batch of wafers, and then input that recipe into the process tool for the next batch of wafers.

[0053] Reference is made to FIG. 6 one example where chamber matching may be done on a run-to-run basis. In order to make adjustments wafer-to-wafer within a batch, there should be provided a way to measure and/or adjust wafer-to-wafer. In this example, this includes an integrated metrology tool 203 and the APC 303 (or a portion thereof) running on the process tool 401 .

[0054] The APC 303 provides a program (or communication with a program running on a controller) that is controlling the process on the chambers 103 and/or process tools 401 to be matched. It includes a process that makes recipe adjustments, preferably automatically, and changes set points on the process tool 401 . Preferably, these set points are provided in a table and are based on a simulated outcome from a previous process. They may be predetermined, based on simulations, actual results and/or calculations (as discussed further below).

[0055] FIGS. 5 and 6 also reference a Separate Module Controller (SMC) 501 . The SMC is implemented, according to one or more embodiments, as hardware and/or software, for enabling connection to and communication of adjustments for matching regarding tools, process modeling and/or process control. The SMC may, for example, be a computer with communications capability. It links two or more process tools, and it provides the communication between the various process tools that are connected to it. Also, the SMC may, for example, be configured so as to communicate with the individual process tools via a remote module controller, or the module controller can be integrated into each tool. The module controller may also include dial in capabilities or may otherwise communicate in any appropriate method with a common server, in order to access the controller software.

[0056] Reference is made to FIG. 7 , showing various alternative (and/or overlapping) implementations of a system that may be used in connection with one or more embodiments of the present invention. In the first implementation 701 , the APC is executed on a separate CPU running the APC 703 ; it is not embedded in the tool controller 705 or process tool 707 . An appropriate communications interface, such as for example the standard Semiconductor Equipment Communication Standard (SECS) 715 communication protocol, interfaces between the APC 703 and the tool controller 705 . The APC 703 provides the program (or communication with the program running on a controller) that controls the process(es) on the chambers and/or tools 707 to be matched.

[0057] The SMC software that performs the actual process control computation, according to these implementations, is on a stand alone computer 713 . The SMC computer 713 is linked, for example such as through a local area network (LAN) or through hardwiring 715 to the process tool 707 and the SMC computer 713 communicates with the tool controller 705 included on the process tool 707 . (Process tools conventionally include some type of a tool controller.)

[0058] Whether or not the process tool 707 is executing under the APC, the tool controller 705 conventionally provides the ability to run the recipes on the process tool. In the first implementation 701 , the APC 703 is a separate device, physically separated from the process tool 707 and communicating therewith.

[0059] In the second implementation 709 , the APC 703 is embedded into the process tool 707 . The APC 703 is packaged on the tool, and it communicates on an interface 715 with the tool controller 705 through an application programming interface (API), such as for example a conventional dcom API interface protocol. In the second implementation 709 the API is included in the APC 703 , and the APC 703 is located physically on the process tool 707 .

[0060] The third implementation 711 may be considered to be an extension of an idea embodied in the second implementation 709 . Here, the separate APC 703 it is not provided as a physically separate stand alone hard drive. According to this implementation the APC software advantageously runs on the same hard drive on which the tool controller 703 runs, so that the APC 703 is physically embedded in both the process tool 705 and the tool controller 707 . This presents a more unitary implementation for use in connection with one or more embodiments of the invention.

[0061] Reference is made to FIG. 8, a block diagram of an example process tool 801 . In this example, there are provided three chambers 803 that are on the top and the left and right side (in the plan view). Each chamber 803 includes two processing stations 807 where the wafers sit, so each chamber can process two wafers at a time, on this particular tool. Not all process tools are configured in this manner. The principles discussed here nevertheless apply to other types of process tools. The two stations 807 are referred to as “left” and “right” twins. This particular process tool 801 can be configured with three identical chambers, all depositing the same film, or configured with different chambers, each running a different type of film. The control concepts according to one or more embodiments of the present invention are used to match two or more products produced by two or more selected chambers 803 , and/or left and right twins to each other. A wafer is loaded into a chamber 803 by a loadlock 805 . A number of such process tools can be used in an assembly line. There might be a bank of perhaps five process tools 801 in a row, all running a particular step. These would further be incorporated into several assembly lines. A specific example of a process tool 801 is the Producer (TM) from Applied Materials of Santa Clara, Calif.

[0062] Reference is made to FIG. 9, a graph illustrating an example of matching of different processing stations. This data was generated by a Producer (TM) tool running a PECVD USG (plasma enhanced chemical vapor deposition undoped silicate glass) process, and shows film thickness data. The left station thickness 903 and right station thickness 901 converge to within 20 angstroms after about 15 wafer pairs. The RF (radio frequency) processing time 905 , 907 in the left 905 and right 907 chambers is adjusted after nine wafer pairs are processed. (An adjustment of the RF processing time will affect the wafer thickness.) There is a target thickness mean, in this case, of 10,000 angstroms, hence, the indicated target film thickness 911 is 10,000 angstroms. The open loop result, i.e., with no process control, is 10,173 angstroms; with process control, the result is 10,003 angstroms. As is illustrated by the graph, without use of the present invention, the mean thickness is 173 angstroms too high. On the other hand, using an embodiment of the present invention, the result is well within tolerances. The standard deviation without the invention is 70, whereas with an embodiment of the invention it is 48, a smaller and therefore more desirable number.

[0063] As illustrated in FIG. 9 , embodiments of the invention were used to match the film thickness between the left and right processing station of the same chamber. The chamber had two processing stations internally that were matched using an embodiment of the invention, to match the results of the left processing station with the right station. The results of those two processing stations were brought into convergence toward each other and toward the target results utilizing the invention. This example illustrates one possible use of the invention to do left-to-right matching, within the same chamber. One or more embodiments of the present invention also contemplate chamber-to-chamber matching, and similar results including convergence are anticipated.

[0064] There are up to three chambers on a typical Producer (TM) tool; therefore there are up to six processing stations. So using one or more embodiments of the present invention, one could cause any combination of two or more of those processing stations, even all six processing stations, to converge to the target. Other tools with which the invention might be used might have any number of chambers, with single, double or more wafer processing capacity. The measured stress results are an indication of film integrity. If there is a high stress in the film, the film is more likely to crack or peel or have other defects; hence, typically there is a target stress value as well as a target thickness. There is also a target refractive index (RI) value. While adjusting the thickness under control it is preferable not to negatively affect some other target film property such as stress or RI.

[0065] The results in the graph of FIG. 9 confirm that although the thickness is converging to the target value, this did not have any detrimental impact on the stress or the RI. To the contrary, the data shows that the embodiments of the present invention used to generate the data in FIG. 9 favorably tightened the distribution on both the stress value and RI value as well as the thickness. Use of the invention resulted in data closer to the target results.

[0066] The left axis of the graph shows thickness measurements in angstroms that are taken from wafer pairs from different matched chambers. The right axis shows processing time consumed for RF processing of each wafer, the processing time being the parameter that is being adjusted.

[0067] The RF time, 905 , 907 begins at 71,000 milliseconds. Both left and right RF time 905 , 907 are the same initially because the invention is operating under open loop conditions and so is not making any adjustments. During open loop conditions, all wafers use the same RF time. When the embodiments of the present invention depicted in FIG. 9 began running adjustments at wafer pair number 9 , adjustments were made to the RF time between the left and right processing station, and hence the graph shows a difference in processing time.

[0068] In order to match these two chambers, the system adjusts the right and left RF time 905 , 907 in the right and left chambers, respectively, to make the selected adjustment. The graph illustrates the right RF time 907 after wafer pair number 9 coming down to 69,400, then oscillating around 69,800 after wafer pair number 16 . The left RF time 905 is still staying up around 70,000 milliseconds after wafer pair number 14 .

[0069] Still referring to FIG. 9 , the two sets of data showing right and left thickness 901 , 903 on the top part of the graph begin with wafer pair number 1 ; there is a difference in thickness, exhibited out to about wafer pair number 13 . The reason for the initial difference is that the system is running in open loop mode for the first ten wafer pairs. When the present embodiments of the invention begin making adjustments at wafer pair number 10 , the thickness measurements converge about three wafers thereafter. Then once it is converged by about wafer pair number thirteen, the two lines, and hence the left and right thickness 901 , 903 are tracking each other.

[0070] When new lot 909 is introduced a first wafer effect is created and the system needs to recalibrate itself. This may take two or three wafers.

[0071] In this particular example, the system can affect the RF time to adjust the film thickness. (RF is a wafer treatment for depositing film wherein the chamber energizes certain gases therein for a period of time to cause the deposition of film on the wafer.) In other types of processing, other model or recipe parameters would be adjusted to achieve desired different results. Although the example of FIG. 9 is PECVD of USG film, it should be understood that the present invention may be used with any type of process tool and/or other components, with other types of processing, and/or with other adjustments, as would be understood by one of skill in this art, to achieve desired results. However, the invention is not limited to the types of chambers and processing (or other necessary specific results or criteria) which are provided herein by way of example, and these examples are not intended to be exhaustive.

[0072] Reference is made to FIG. 10 , illustrating the invention as applied in an example using another alternative embodiment to a different type of process tool, here a Sub-Atmospheric Chemical Vapor Deposition (SACVD) process tool. This example uses a different kind of hardware to deposit the same film, illustrating that one or more embodiments of the present invention can apply to multiple types of processes and multiple types of films. The typical mismatch between the left and right processing station in this example is around 70 angstroms. The graph shows the left-right difference 1001 . The goal is for this difference 1001 to become or approach zero. FIG. 10 shows the difference 1001 approaching zero after closed loop control is initiated.

[0073] In this example, the spacing between the wafer and the shower head is being adjusted to achieve the match. In the previous example, time was adjusted to achieve the match. As shown in the graph of FIG. 10 , the left spacing and right spacing 1005 , 1007 are essentially the same up to wafer set number 5 , and then they start to deviate. The Best Known Method (BKM) spacing 1003 or the recommended spacing is 300 mils. for either left or right side. In order to achieve a match of film thickness this embodiment of the invention used 303 mil for the left spacing 1005 and 297 mils for the right spacing 1007 . One may observe from this that there are extremely minute but important changes in the wafer position, relative to the shower head such that a small amount of tweaking enables matching. The adjustment is very sensitive.

[0074] The APC determines the amount of adjustment to be made, according to one or more embodiments, by use of any available model that describes the process. One appropriate model that determines an adjustment is the iAPC configuration option, available from Applied Materials, in connection with tools sold under trademarks including Producer(TM), Centura(TM), Mirra (TM), Reflexion (TM) or Endura(TM). According to one such model, the first wafer is run on the process tool and then the result is measured on the first wafer; the measured result is entered into the model. The model computes what the result should have been, compares it to the actual result, and determines a different set of processing conditions, if any, that would theoretically meet the target. That information includes an adjustment in the recipe for the next wafer. In the time it takes the robot to move the next wafer into the chamber, the calculations are done, the new recipe set point (including the adjustment) is determined, and the adjustment to the process tool is made.

[0075] Reference is made to FIG. 11 . This is a block diagram illustrating typical input parameters and measured output for a Black Diamond (TM) (available from Applied Materials) process, used for determining an appropriate adjustment in a recipe. The model 113 simulates for a given inputted value of RF time 1101 , spacing 1103 , and power 1105 , the resulting film thickness 1107 , stress 1109 , and refractive index 1111 .

[0076] A unique model is built for each process and subsequently stored and made available for later reference. Hence, the model illustrated here would be different for other devices. For example, the input parameters could differ. On an etch tool, as one example, the typical adjusted parameters could include RF time, power, and/or one or more gas flow rates. There might be three or four or even more different input parameters, and likewise the outputs that are measured will differ. These and other models for determining adjustments are commercially available, as mentioned above.

[0077] Reference is made to FIG. 12 , showing a simulated example Black Diamond (TM) process, with open loop vs. closed loop data. This simulation illustrates that closer chamber matching is possible with closed loop control. In this particular example, 351 pairs were run through the simulated invention. A left chamber 1201 and right chamber 1203 are run under open loop conditions 1209 . The left and right mean is 11,000 angstroms, the standard deviation is 120, and the left to right mean in angstroms is 155. In contrast, a left chamber and right chamber 1205 , 1207 run under closed looped conditions 1211 yield a left and right mean of 11,000 angstroms, a standard deviation of 85, a left to right mean of 1.2 angstroms, and a standard left to right deviation of 99; the left mean is 11,001 angstroms, the standard deviation is 77, the right mean is 11,000 angstroms, and the right standard deviation is 94.

[0078] Reference is made to FIG. 13 illustrating a simulated closed loop run, with RF time adjusted, of Black Diamond (TM) film thickness. This graph illustrates the right and left time 1301 , 1303 , as well as the left and right thickness 1305 , 1307 , under simulated closed loop run conditions. As is illustrated, the left and right mean is 11,000 angstroms, and the standard deviation is 85; the left mean is 11,001 and the left standard deviation is 77, the right mean is 11,000 angstroms, the right standard deviation is 94, the left to right mean is 1.2 angstroms, and the left to right standard deviation is 99. This illustrates that left and right chamber matching is achieved by continuous RF time control.

[0079] Reference is now made to FIG. 14 , illustrating a block diagram of a process tool with integrated automatic process control (APC), as envisioned for use with one or more embodiments of the present invention. As is illustrated here, according to one or more embodiments of the present invention, an APC 1417 is included at least in part on a particular process tool 1405 , and is used to optimize the wafer results by controlling operational performance of a process tool 1405 , using model based control. The APC includes data collection, appropriate hardware and software models to enable the process tool to operate as desired. A customer 1401 will supply its desired wafer result target(s) 1403 to the process tool 1405 . The result target(s) 1403 will be incorporated into the processing by the APC 1417 , which will drive the tool controller 1411 in order to obtain the result target. The APC obtains (and/or shares) behavior information and attempts to converge the results of the process tool to the target utilizing the behavior information to adjust the processing parameters. Note that appropriate communications devices may optionally be included, in this illustrated embodiment including generic equipment model (“GEM”)/SECS interface 1415 and/or a graphical user interface (GUI) 1409 . Additionally, if desired, external data 1407 can be taken into account as input by the process tool 1405 .

[0080] Reference is now made to FIG. 15 , showing a block diagram of one or more embodiments of the present invention used with an optional separate module control (“SMC”). The SMC contains module level models that provide for automatically setting process tool results targets, for example in a multi-tool environment. As illustrated, multiple process tools 1503 such as smart tools (i.e. having embedded computer intelligence) are included. Each of the process tools 1503 in this example includes an APC 1505 , which enables the process tool 1503 to become part of a process module, and a tool controller 1507 . The APC obtains (and/or shares) behavior information and attempts to converge the results of the process tool to the target utilizing the behavior information to adjust the processing parameters.

[0081] Reference is now made to FIG. 16, a block diagram illustrating top level control for one or more embodiments of the present invention. The process tool 1601 includes a tool controller 1603 , as well as a SECS 1605 , communicating to a cell controller 1609 . The cell controller communicates with other devices via a fab message bus 1607 . Multiple process tools and/or devices of other types may be connected together via a fab message bus. Moreover, the fab message bus may communicate with a fab controller providing overall control over an assembly line. Communications include, inter alia, behavior information used to coverage processing results. The benefits of tool level control are that the tool monitoring is embedded, which allows a high level performance on control. Further, this enables automatic process results, rather than trial-and-error or manual process parameter settings. Additionally, this enables enhanced process tool performance both on a wafer-to-wafer level and a within-wafer level, together with integrated metrology. Standard interfaces may be utilized to allow monitoring of data. Reference is now made to FIG. 17, a block diagram illustrating a multiple tool level control over peer process tools that may be used in connection with one or more embodiments of the invention. An SMC 1701 is provided to control multiple peer tools 1705 , that is, process tools of a similar type. As illustrated, these peer tools are capable of being configured in a comparable manner. The SMC 1701 communicates with the peer tools 1705 via a message bus 1707 . This allows for unified control over any porting of models, remote viewing of the process tools, and results matching from chamber to chamber and/or process station to station, regardless of process tool, as well as from tool to tool. The level of commonality of the chambers and the results can be analyzed, preferably by the SMC 1701 . Further, the productivity can be matched and the throughput can be balanced by appropriate control in accordance with one or more embodiments of the invention. Optionally, the SMC 1701 includes GUI 1703 interface.

[0082] Reference is made to FIG. 18, a block diagram illustrating multiple tool level control that may be used in connection with one or more embodiments of the present invention. Here, the SMC 1701 communicates to the process tools 1805 , 1807 via the fab message bus 1809 communicating with an APC 1811 on each process tool 1805 , 1807 . The customer 1803 provides the module target 1801 to the SMC 1701 . The SMC utilizes its typical process models in order to determine the recipes that should be loaded onto each of the process tools 1805 , 1807 . The SMC can adjust each process tool recipe in order to achieve a particular result target. The SMC can also enable chamber matching across the various different types of process tools 1805 , 1807 .

[0083] Reference is now made to FIG. 19, a block diagram illustrating a system having a process module application, which may be used with one or more embodiments of the present invention. The illustrated system includes an SMC 1701 with optional GUI 1901 , communicating with various process tools 1911 , 1913 , 1915 via a fab message bus 1903 . An assembly line is provided, including a chemical mechanical polisher (“CMP”) 1909 , electrico-chemical platter (“ECP”) 1907 and physical vapor deposition (“PVD”) 1905 . Chambers can be matched across process tools that are of the same type, in order to permit assembly line processing through the CMP, ECP and PVD tools. More or fewer tools, or tools of different types and/or configurations, could be implemented in other embodiments.

[0084] Reference is now made to FIG. 20, a block diagram illustrating a system having process module level control for use in connection with one or more embodiments of the invention. A controller 2001 is provided, in this example, a module server on a computer. The controller 2001 communicates with the process tools 2005 via a fab message bus 2003 , using SECS protocol 2011 . Alternatively, the module server may communicate with the APC 2009 via a network connection such as an Ethernet network 2008 . In this illustration, there are provided multiple process tools 2005 connected directly or indirectly to the controller 2001 .

[0085] Reference is now made to FIG. 21, a flow diagram for one or more embodiments of the invention, showing the processing at the process tool level. This example could be executed, for example, on the processing devices corresponding to that shown in FIG. 4 and FIG. 6 . Here, at step 2101 , the process tool obtains a wafer for processing. At step 2103 , the process tool (or controller, such as process tool controller or process controller) checks whether behavior information exists for this process tool. At step 2105 , the process tool (or other controller) checks whether the behavior information is appropriate for this type of processing. The “same type” process could be, for example, the identical processed device, or a same recipe (or recipe combination) used for this processing step even if the ultimate processed device is different.

[0086] According to one or more embodiments, steps 2103 and 2105 are also executed when the process tool detects that it has switched to processing a new type of device. If for example the process tool was an etch device, it would detect that it received a new family of recipes, as a result of a user instructing the fab as to the family of recipes to use for that step. The etch recipe can then be tuned, if behavior information exists, to the appropriate recipe for the new product. This allows the system to more quickly characterize and optimize the performance of a process tool.

[0087] The behavior information has been provided in some manner, such as a broadcast from a parallel processing tool, or central storage for example. If there is appropriate behavior information, at step 2107 , the process tool uses the behavior information and parameters to adjust the recipe. By use of behavior information, the process tool “learns” and applies the learning from prior processing that is sufficiently similar or analogous to the current processing.

[0088] At step 2109 , the process tool processes the wafer in accordance with the recipe, which may have been adjusted to take into consideration available behavior information. At step 2111 , the process tool (or other metrology tool) measures the wafer as usual. At step 2113 , having obtained the metrology results, the process tool obtains a process control computation, probably from the process controller. The process control computation, discussed above, may be provided in any appropriate manner, and is intended to adjust the processing to be closer to specification. Process control computations are available to those skilled in the art.

[0089] At step 2115 , the process tool determines whether a recipe parameter was adjusted. This could be determined, for example, because the process tool received an adjusted parameter, or received a new recipe. If the recipe parameter was adjusted, the process tool broadcasts the recipe parameter adjustment to parallel process tools at step 2117 . The broadcast could be accomplished, for example, by transmitting the adjusted recipe and/or adjusted recipe parameters to the process controller, which then broadcasts the adjustment to parallel process tools. Alternatively, if the process tools communicate with each other, the adjustment could be broadcast directly to the parallel process tools. As a further alternative, the recipe adjustments (behavior information) could be stored centrally, and could be accessed by each process tool. The adjusted recipe parameter is also stored at the process tool, at step 2119 . The process tool determines whether it is done processing wafers at step 2121 , and if not, it loops back to obtain the next wafer for processing at step 2101 .

[0090] In connection with the flow chart of FIG. 21 , it will be noted that conventional methods can be provided for avoiding collisions between behavior information. If there is a collision, for example, the system could take most recent data, or data having results closest to target, or data from highest numbered process tool, or any combination of the foregoing. It is possible to provide for allocation and de-allocation of storage at appropriate points in the flow chart, if more sophistication is desired. Further, it will be appreciated that the broadcast of behavior information could be provided in a number of ways. For example, a simple transmission could be in accordance with any utilized communication protocol between process tools and/or process controller(s). Moreover, a broadcast of behavior information data could be provided to local and/or remote process tools, even over the Internet. Hence the invention is not necessarily limited to use in a single fab, and indeed the broadcast data could be transmitted among multiple fabs and/or customers and/or users if desired.

[0091] While this invention has been described in conjunction with the specific embodiments outlined above, many alternatives, modifications and variations will be apparent to those skilled in the art. Accordingly, the preferred embodiments of the invention as set forth are intended to be illustrative and not limiting. Various changes may be made without departing from the spirit and scope of the invention as defined in the following claims.

[0092] The invention has been described in connection with specific process tools, although other examples of process tools have been provided. It is not intended to limit the invention to these specified process tools. More specifically, this invention is intended to accommodate any process tool, including any type of process tool used in manufacturing semi-conductors.

[0093] As another example, the advanced process control may be implemented on a general purpose computer or on a specially programmed computer. It may also be implemented as a distributed computer system, rather than a single computer system. Further, some of the distributed systems might include embedded systems; the programming may be distributed among processing devices and/or metrology tools and/or other parts of the process control system.

[0094] Similarly, the processing may be controlled by software on one or more computer systems and/or processors and/or process tools, or could be partially or wholly implemented in hardware. Moreover, the advanced process control may communicate directly or indirectly with relevant metrology tools and processing tools, or the metrology tools and processing tools may communicate directly or indirectly with each other and the advanced process control.

[0095] Further, the invention has been described as being implemented on a closed network. It is possible that the invention could be implemented over a more complex network, such as an Intranet, the Internet, or it could be implemented on a single computer system. Moreover, portions of the system maybe distributed (or not) over one or more computers, and some functions maybe distributed to other hardware, such as tools, and still remain within the scope of the invention.