[0002] For a heat treatment jig for production of a semiconductor as typified by a wafer boat, prevention of slip of a wafer at the time of heat treatment has been an important subject for study. Here, slip (also called “glide” or “dislocation”) means formation of minute difference of elevation on a wafer due to crystal defects which can be observed by a microscope. Such a slip is considered to occur due to internal stress by the wafer's own weight or due to heat strain stress based on non-uniformity in the in-plane temperature of the wafer, since it is likely to occur at a part in the vicinity of a part of the wafer which is in contact with the jig, when the wafer is subjected to a heat treatment at a high temperature at a level of 1,000° C. for a long period of time for example.
[0003] As a countermeasure to prevent occurrence of the slip (hereinafter referred to as slip countermeasure), JP-A-2000-119079 proposes to make the surface roughness Ra at most 0.2 μm at a part on a heat treatment component for a semiconductor made of Si—SiC to be in contact with a Si wafer, and use of a diamond blade as a process therefor also as grooving. However, in the above publication, no specific disclosure is made such as the type of the diamond blade or grooving conditions.
[0004] Further, JP-A-2000-124143 proposes to make the vertical distance between the top and the root (corresponding to the surface roughness Ry) on the surface of holding grooves of a boat for heat treatment at most 10 μm, however, no specific means is disclosed.
[0005] Further, for a heat treatment jig for production of a semiconductor, in addition to the above slip countermeasure, a countermeasure for high purification is also important. For such a countermeasure for high purification, a chemical vapor deposition method (hereinafter referred to as CVD) may be carried out to form a film (hereinafter referred to as CVD film) on the surface of a substrate of the jig, since 1) such a film is excellent in heat resistance and corrosion resistance, 2) it has an extremely low content of metal impurities, 3) it can suppress diffusion of impurities such as metals in the inside of the substrate into a semiconductor wafer, and 4) it has excellent properties such as denseness.
[0006] With respect to such a CVD film, protrusions may form on the surface of the CVD film in some cases although the size and the number vary depending upon synthesis conditions. The protrusions formed on the surface of the CVD film are considered to be a main cause of the slip, and for the slip countermeasure, a method of smoothing the surface of the CVD film to eliminate the protrusions (hereinafter smoothing of the surface is generically referred to as polishing) has been desired.
[0007] In a case where the CVD film is formed on a flat plate, polishing is relatively easily carried out. However, no means has been known to polish the surface of a CVD film formed on an object to be polished having a complicated shape such as a groove part of a wafer boat. For example, when a conventional diamond blade is employed as a means of polishing a CVD film formed on a groove part of a wafer boat, a stress is applied to teeth of a comb constituting grooves in a step of applying the blade to the grooves, whereby cracks are likely to form in the vicinity of roots of the teeth of the comb, and if the film thickness is at most 150 μm, the thin CVD film is likely to be peeled off and no desired film thickness may be obtained.
[0008] Under these circumstances, it is an object of the present invention to provide a grinding wheel for polishing, which is suitable for polishing the surface of a complicated shape part of an object to be polished having a complicated shape, as typified by a groove part of a wafer boat, and a polishing method employing it.
[0009] The present invention provides a grinding wheel for polishing, which comprises a grinding substrate and diamond-containing resin fibers implanted in the substrate in a form of a brush, and a polishing method employing it.
[0010] Now, the present invention will be described in detail with reference to the preferred embodiments.
[0011] In the accompanying drawings:
[0012]
[0013]
[0014]
[0015]
[0016]
[0017]
[0018]
[0019]
[0020] The grinding wheel for polishing of the present invention (hereinafter referred to as the present polishing wheel) is characterized by that diamond-containing resin fibers (hereinafter referred to simply as fibers) are implanted in a polishing substrate in a form of a brush. For the present grinding wheel, as a material of the grinding substrate, various ones may be used, and a metal is preferred since it is excellent in mechanical strength, and stainless, aluminum or steel stock may, for example, be mentioned.
[0021] For implantation, the fibers may directly be implanted in one side, both sides or side face of the disk in a form of a brush, or the fibers may be indirectly implanted in such a manner that brushes (in such a shape that fibers are fixed to an entangled wire such as a brush part of a test tube brush for example) are constituted by the fibers, which are further fixed to the grinding substrate by means of e.g. bonding. Fixation of the fibers to the grinding substrate is not particularly limited, and adhesion, welding, soldering or fastening by a wire may, for example, be mentioned. Here, in the present specification, implantation in a form of a brush means that the fibers are densely implanted.
[0022] In a case of directly implanting the fibers, each fiber may be implanted with a short interval. Otherwise, it is possible to obtain the present grinding wheel
[0023] The interval between bundles (hereinafter referred to as pitch) is optionally selected depending upon the number of the fibers in a bundle. In a case of
[0024] Here, as a fixation method of the fibers
[0025] FIGS.
[0026] FIGS.
[0027] In the present invention, the type of the resin of the fibers is not particularly limited, and a nylon resin may, for example, be mentioned in view of the balance between the hardness and elasticity. The diameter of the fibers is not particularly limited also, but fibers having a diameter of from 0.1 to 1.5 mm are preferred since they are readily available. The diameter of the fibers is more preferably from 0.1 to 1.0 mm, particularly preferably from 0.1 to 0.4 mm.
[0028] The length of the fibers is not particularly limited also, but fibers having a length of from 0.5 to 10 mm are preferred since they are readily available. The length of the fibers is more preferably from 1 to 6 mm in view of e.g. processability. It is more preferred that the diameter of the fibers is from 0.1 to 0.4 mm, and the length of the fibers is from 1 to 6 mm. The ratio of (the length of the fibers)/(the diameter of the fibers) is particularly preferably from 10 to 30, whereby the degree of polishing and the surface state can readily be controlled. As an example of a preferred fiber shape, fibers having a length of 3 mm and a diameter of 0.15 mm may be mentioned.
[0029] In the present invention, the particle size of the diamond is optionally selected depending upon the required surface roughness, and it is preferably from #400 to #3,000 as stipulated in JIS R6001 (electric resistance test). If the particle size of the diamond is rougher than #400, scars are likely to form on the polished surface, and further, if the particle size of the diamond is finer than #3,000, the surface roughness to be obtained is less likely to be lessened any more, and it tends to be difficult to prepare the grinding wheel.
[0030] In the present invention, the particle size of the diamond is preferably such that the particle diameter is from 4 to 30 μm at a 50% point of the cumulative height (electric resistance test). If the above particle diameter is larger than 30 μm, scars are likely to form on the polished surface, and if the particle diameter is smaller than 4 μm, the surface roughness to be obtained is less likely to be lessened any more, and it tends to be difficult to prepare the grinding wheel.
[0031] Further, the particle size of the diamond is more preferably such that the particle diameter is from 4 to 14 μm at a 50% point of the cumulative height, whereby an edge part of teeth forming grooves of an object to be polished such as a wafer boat, can be polished without impairing accuracy of form, while chamfering the edge part into a curved shape with a curvature radius of from 0.2 to 3 mm (hereinafter referred to as R-chamfering).
[0032] In the present invention, the content of the diamond contained in the fibers is preferably from 5 to 40 mass % in the fibers. Here, the type of the diamond is not particularly limited, and synthetic diamond or natural diamond may optionally be used.
[0033] As an object to be polished by using the present grinding wheel, a surface for which mirror polishing is required may be mentioned. It is suitable to polish the surface of a complicated shape part of an object to be polished having a complicated shape by using the present grinding wheel. For example, in a case where the surface to be polished is the surface of a groove part of a wafer boat, said groove part is weak in mechanical strength and has a complicated shape, and accordingly it is preferably polished by the present grinding wheel.
[0034] Further, it is particularly preferred to polish the surface of a complicated shape part of an object to be polished having a complicated shape, on which a vapor deposition film by CVD or a vapor deposition film by PVD is formed, by the present grinding wheel, whereby effects of use of the present grinding wheel can be obtained. The surface of a groove part of a SiC wafer boat, the surface of which is covered with a SiC film formed by CVD, may, for example, be mentioned.
[0035] The surface roughness on the surface polished by the present grinding wheel can be controlled by selecting the particle size of the diamond. The surface roughness Ry on the surface to be in contact with e.g. a wafer is particularly preferably at most 5 μm, whereby excellent smoothness tends to be obtained, and the surface roughness Ry is more preferably at most 2 μm. It is particularly preferred as a slip countermeasure of a wafer that the surface roughness Ry is at most 1 μm and the surface roughness Ra is at most 0.1 μm.
[0036] In a case where the vapor deposition film surface is polished by using the present grinding wheel, the thickness of the vapor deposition layer after polishing is preferably at least 20 μm, whereby functions of the CVD vapor deposition film such as prevention of diffusion of impurities in the substrate are not impaired.
[0037] As conditions of polishing by using the present grinding wheel, the peripheral speed of the grinding wheel is preferably from 100 to 1,500 m/min, more preferably from 300 to 800 m/min, the feed rate of the grinding wheel is preferably from 0.5 to 20 mm/min, more preferably from 3 to 10 mm/min, and the depth of cut by the grinding wheel is preferably from 0.1 to 5 mm, whereby the surface roughness Ry on the polished surface of at most 1 μm is likely to be obtained.
[0038] Now, the present invention will be described in further detail with reference to Examples. However, it should be understood that the present invention is by no means restricted to such specific Examples.
[0039] As samples 4 for evaluation (hereinafter referred to simply as samples), a plurality of blocks (30×12×100 mm) made of silicon-impregnated SiC having four grooves (20×12×10 mm) formed thereon with an interval of 10 mm, were prepared. Some of the blocks were put in a CVD apparatus to form a CVD film of SiC on their surface. The thickness of the CVD film was 60 μm as calculated from the change in dimension. Further, as the surface state on the CVD film surface, the surface roughness Ra was 1.5 μm and the surface roughness Ry was 15 μm.
[0040] On a grinding substrate
[0041] Using teeth 5 of a comb constituting grooves of the sample
TABLE 1 Peripheral Surface Surface speed Feed rate roughness roughness Conditions (m/min) (mm/min) Ra (μm) Ry (μm) 1 400 6 0.1 0.5 2 600 6 0.1 0.6 3 900 9 0.3 1.5 4 900 15 0.3 1.6 5 700 6 0.1 0.5 6 700 9 0.1 0.6 7 1100 15 0.5 4.0
[0042] The same operation as in Example 1 was carried out that a sample
[0043] As a grinding wheel
[0044] Using this grinding wheel, the teeth 5 of the comb of the sample 4 having a CVD film formed thereon was polished by a wet method under condition 1 of Table 1. The surface state of the teeth 5 of the comb polished was measured in the same manner as in Example 1, and Ra was 0.3 μm and Ry was 1.5 μm.
[0045] The same operation as in Example 1 was carried out except that the particle size of diamond contained in the nylon resin fibers
[0046] In Example 4, polishing was carried out by using a diamond grinding wheel comprising a grinding substrate and diamond abrasive grains bonded to the substrate by means of a resin bond (particle diameter at a 50% point of the cumulative height: 11.5 μm) instead of the grinding wheel 10 of the present invention. The polishing was conducted under condition 2 of Table 1. The surface state of the polished surface was observed, and it was confirmed that part of the CVD film was peeled off. Further, a part in the vicinity of roots of the teeth
[0047] The same operation as in Example 2 was carried out except that fibers having a diameter of 0.6 mm and a length of 3 mm (particle size of diamond contained: particle diameter of 30 μm at a 50% point of the cumulative height, diamond content: 35 mass %) were used instead of the fibers
[0048] The same operation as in Example 6 was carried out except that fibers having a diameter of 1 mm and a length of 3 mm (particle size of diamond contained: particle diameter of 14 μm at a 50% point of the cumulative height, diamond content: 30 mass %) were used instead of the fibers
[0049] The same operation as in Example 6 was carried out except that fibers having a diameter of 1 mm and a length of 3 mm (particle size of diamond contained: particle diameter of 57 μm at a 50% point of the cumulative height, diamond content: 35 mass %) were used instead of the fibers
[0050] According to the present grinding wheel, the surface of an object to be polished having a complicated shape can be polished into a mirror surface while leveling the surface. For example, the surface of an object to be polished having low mechanical strength and a complicated shape, such as a groove part of a wafer boat, can be polished into a mirror surface. Further, since the load during polishing tends to be low, the polished surface is less likely to be damaged. Further, the polishing method using the present grinding wheel is a leveling processing, whereby the polishing cost tends to be low, and the surface can be polished into a mirror surface while maintaining the accuracy of form, such being advantageous.
[0051] Further, by using the present grinding wheel, R-chamfering of the edge part of teeth forming grooves with a curvature radius of from 0.2 to 3 mm can be conducted by automatic polishing with a good accuracy.
[0052] Even when the surface to be polished has a CVD vapor deposition film formed thereon, it can be polished without being damaged at a low polishing cost, whereby it can be polished into a mirror surface while securing the CVD film thickness. In such a case, protrusions which are characteristic to the CVD vapor deposition film can be eliminated, whereby particularly the surface roughness Ry can be lessened. Accordingly, use of a wafer boat polished by the present grinding wheel is particularly effective for the slip countermeasure.
[0053] The entire disclosure of Japanese Patent Application No. 2001-127978 filed on Apr. 25, 2001 including specification, claims, drawings and summary are incorporated herein by reference in its entirety.