Next Patent: Semiconductor memory device
Next Patent: Semiconductor memory device
Plaque It!
Sponsored by: Flash of Genius |
[0001] These co-pending applications and the present application are owned by one and the same assignee, International Business Machines Corporation of Armonk, New York.
[0002] A Digital Temperature Sensor (DTS) System to monitor temperature in a memory subsystem, by inventors: Kirk D. Lamb and Kevin C. Gower, filed ______, under U.S. Ser. No. ______.
[0003] An Analog-to-Digital Converter for monitoring VDDQ and dynamically updating programmable Vref when using high-frequency receiver and driver circuits for commercial memory, by inventors: Kirk D. Lamb and Kevin C. Gower, filed ______, under U.S. Ser. No. ______.
[0004] An Alternating Current Built in Self Test (AC BIST) with variable data receiver voltage reference for performing high-speed AC memory subsystem self-test, by inventors: Kirk D. Lamb, Paul Coteus, and Kevin C. Gower, filed ______, under U.S. Ser. No. ______.
[0005] The descriptions set forth in these co-pending applications are hereby incorporated into the present application by this reference. Trademarks: IBM is a registered trademark of International Business Machines Corporation, Armonk, N.Y., U.S.A. Other names may be registered trademarks or product names of International Business Machines Corporation or other companies.
[0006] This invention relates to a digital temperature sensor (DTS) system to monitor temperature in a memory subsystem, and particularly one capable of monitoring both ambient air or packaging surface temperature at multiple locations in a coupled commercial DRAM memory array.
[0007] The present inventions were created in a development directed to using commercial memory products to be used with a memory interface for IBM products. Representative of the commercial memories is the memory of Samsung Electronics Co., Ltd's represented by their DDR-II SDRAM (Synchronous Dynamic Random Access Memory).
[0008] As this application is directed to temperature sensing, we note that patents have been granted for temperature sensing of semiconductor chips at multiple locations. Examples of such patents include the U.S. Pat. No. 5,994,752 for a field-effect-controllable semiconductor component with a plurality of temperature sensors, as filed by Rainald Sander and Alfons Graf for the assignee, Siemens Aktiengesellschaft, Munich, Germany. In this U.S. Pat. No. 5,994,752 patent issued Nov. 30, 1999 a field-effect-controllable power semiconductor component, such as a power MOSFET or IGBT, includes a semiconductor body, at least one cell field, a multiplicity of mutually parallel-connected transistor cells disposed in at least one cell field, and at least two temperature sensors integrated in the semiconductor body and disposed at different locations from each other on the semiconductor body. Thus a temperature gradient between a strongly heated local region of the semiconductor body and one of the temperature sensors is reduced and a response time in the event of an overload is shortened.
[0009] U.S. Pat. No. 6,144,085 of Richard J. Parker, issued Nov. 7, 2000 for a power transistor device having hot-location and cool-location temperature sensors, was assigned to U.S. Philips Corporation, New York, N.Y. In this U.S. Pat. No. 6,144,085 patent a power transistor device, for example a MOSFET or an IGBT, provided a semiconductor chip which accommodates an array of parallel device cells in which heat is generated in operation of the chip device. A hot-location temperature sensor was located inside the array, and a cool-location temperature sensor was located outside the array. Each of these sensors have at least one sensor cell which is of the same transistor type as the device cells. The sensor cells have a cellular region structure similar to that of the device cells, but each sensor has a respective output electrode separate from electrodes of the device cells. A detection circuit is coupled to the respective output electrodes of the hot-location and cool-location temperature sensors for detecting a temperature difference between the hot and cool locations by comparing voltage signals from the output electrodes.
[0010] In Shoichi Furuhata's U.S. Pat. No. 5,521,421 for a semiconductor device issued May 28, 1996 to Fuji Electric Co., Ltd., Hino, Japan, there was described a semiconductor device with a power element on a substrate, and the device had a temperature monitor element formed on the same substrate. In case of thermal overload in the power element, a signal from the temperature monitor element could be used for turning the power element off. For enhanced temperature response, the temperature monitor element was partly surrounded by the power element or/and disposed beneath an integrated, thermally conductive extension of an electrode of the power element.
[0011] However, while temperature sensing techniques like those indicated above for semiconductor chips have been known, these prior teachings do not address the need for a digital temperature sensor (DTS) to monitor either ambient air or packaging surface temperature in a memory subsystem when the memory itself is designed by others or is a commercial product, as is the custom today with the use of industry standard components. The temperature inside the commercial memory subsystem can vary over time, and an effective, accurate, and low-cost method is needed to monitor the temperature. In creating this solution, it is also recognized that there are commercial sensing devices which can be mounted in a higher level package, which can be monitored with special hardware, which, however, do not meet the needs to which our invention is directed.
[0012] In the related invention an Analog-to-Digital Converter (ADC) is used to monitor Vddq. Here it should be noted that U.S. Pat. No. 5,206,944 for high speed analog to digital converter board for memory applications for an IBM PC/AT has issued Apr. 27, 1993 to inventor Michael D. Pilkenton and assigned to The United States of America as represented by the Secretary of the Air Force, Washington, D.C. In this patent a flash analog-to-digital converter (ADC) was provided in a single IC package which has an analog input coupled to a video signal source. The data line from the ADC circuit goes to a SRAM (Static Random Access Memory) memory made up of four identical banks which are interleaved together so that slower less costly memory chips can be used. In this device an interface circuit provides communication between the computer and a digitizer, with address, data and control lines. The U.S. Pat. No. 5,206,944 digitizer, which comprises integrated circuit cards designed to attach to an expansion slot in an IBM PC/AT, operates at 20 megasamples per second for approximately 52 milliseconds and provides eight bit resolution on the signal input. The computer software includes a device driver for the digitize A sync pulse from the video tape unit which is monitored by a sync pulse input comparator to trigger the start of a digitizing sequence. Thus, we can recognize ADCs have been used in memory interface applications.
[0013] Also, some vendors include a Digital Temperature Sensor (DTS) in the same component as the ADC. Examples of this are the Analog Devices, Inc.'s AD7417 and AD 7418, which contain a DTS and either four or one ADC respectively. These devices are not being used to monitor memory subsystem temperatures.
[0014] In order to use the representative commercial memory SDRAMs we have achieved a way to allow signals to access a Samsung Electronics Co., Ltd's DDR-II SDRAM (Synchronous Dynamic Random Access memory) which includes on-chip registers, described in its specification, which implement a programmable CAS latency, and a programmable additive latency to ensure a tRCDmin specification is met. The present application describes separate inventions described in this application which do not affect or alter the contents of these registers, and do not make use of the contents of the Samsung registers, and yet enable a commercial SDRAM memory such as the Samsung DDR-II SDRAM to be used in a standard memory subsystem for IBM using a new ASIC (application specific integrated circuit).
[0015] The preferred embodiment of the invention uses a Digital Temperature Sensor (DTS) system to monitor either ambient air or packaging surface temperature in a memory subsystem which uses a variety of separate coupled commercial memory parts not necessarily manufactured by the creator of the memory subsystem. In accordance with the preferred embodiment of the invention, a Digital Temperature Sensor DTS is connected to an ASIC which serves as a memory controller for the separate coupled memory chips supplied by various commercial vendors of state of the art memory, such as memories meeting standards developed by the JEDEC standards committee and marketed by member supporters of the standards committee, for example the Double Data Rate or DDR memories like those of Samsung Electronics Co., Ltd. as represented by its DDR-II SDRAM (Synchronous Dynamic Random Access Memory).
[0016] There have been many improvements to the interface for controlling a memory subsystem comprising plural arrays of SDRAM in the form of a plurality of SDRAM memory chips which are made to operate with a memory subsystem control system utilizing our developments with a new memory controller interface ASIC (application specific integrated circuit). Our system varies Vref during initial adjustment of the pull-up and pull down impedance of a DDR-II SDRAM off-chip data drivers. The system finds an optimum impedance setting for the DDR-II SDRAM off-chip driver pull-up and pull-down impedance during initialization. The system monitors vddq during normal system operation using an ADC. The system varies Vref as a function of vddq, using a combination of a DAC and ADC. The system varies Vref as a function of Vddq, such that Vref=1/m*Vddq+OFFSET, where m can be 1, 2, 4, or 8, and where OFFSET can be positive or negative ranging from 1/n*Vddq to n-−1/n*Vddq, where n is the voltage granularity of the DAC.
[0017] The overall system monitors surface temperature, ambient air temperature, or both at one or more locations in a memory subsystem using one ASIC and one or more DTS. One or more fans are controlled in order to control as well as monitor surface and ambient air temperature. The memory subsystem has a Built In AC Self Test. This system writes pseudo-random patterns to memory, reading them back and comparing the expected results at hardware speeds. The system varies Vref across its allowable range during Built In AC Self Test to provide improved self-test coverage.
[0018] These and other improvements are set forth in the following detailed description so as to enable a clearer understanding of our claimed inventions. For a better understanding of the invention with advantages and features, refer to the description and to the drawings.
[0019]
[0020]
[0021] Our detailed description explains the preferred embodiments of our invention, together with advantages and features, by way of example with reference to the drawings which are applicable to the claimed inventions and related applications.
[0022] The memory controller DDR-II Interface ASIC (the application specific integrated circuit DIA
[0023] The DDR-II Interface ASIC (DIA)
[0024] DAC-Vref
[0025] ADC-V,T1
[0026] In such an implementation of our preferred embodiment the Over-Temperature Indicator (OTI) output pin of ADC-V,T1
[0027] DTS-T2
[0028] The fan voltage control output of DAC-FAN
[0029] The Over-Temperature Indicator (OTI) output of ADC-V,T1
[0030] The Vddq Voltage Supply
[0031]
[0032] The data bi-directional drivers and receivers
[0033] The master controller
[0034] In order to write to or read from one of the devices
[0035] During normal operation, when Vref is supposed to be a function of Vddq (typically ½ Vddq), the master controller reads the vddq voltage via ADC-V,T1
[0036] The “Temperature Monitor and Fan Control” module
[0037] The circuit named BIST DGEN
[0038] The circuit named BIST AGEN
[0039] The circuit BIST CMPR
[0040] The circuit CFG REGS
[0041] Registers named System Data
[0042] During AC BIST the master controller adjusts Vref to a specified value stored in the CFG REGS, according to the above previously described method of adjusting Vref by writing to DAC-Vref. The master controller then performs one or more iterations of AC BIST. The master controller first writes pseudo-random data to DDR-II SDRAM by seeding the LFSR of BIST DGEN from data in CFG REGS, and by initializing the starting address of BIST AGEN from the CFG REGS. The master controller signals BIST DGEN to shift its Linear Feedback Shift Registers (LFSR) when it signals BIST AGEN to increment its address. After all the data has been written to the DDR-II SDRAM, the master controller initializes BIST DGEN and BIST AGEN, and reads the data from one or more of the DDR-II SDRAMs. The data from the DDR-II SDRAM(S) and BIST DGEN are provided to BIST CMPR, and a compare is performed on the actual data received against the expected value provided by BIST DGEN. A count of failing bits and number of fails is maintained by BIST CMPR. Upon the completion of AC BIST, the master controller writes the results of the AC BIST from BIST CMPR to CFG REGS, which makes the information available to the system. Each write to memory, read from memory, and compare cycle can be considered an iteration at constant Vref. The master controller can then adjust Vref and repeat another iteration. The CFG REGS can be written in a manner so that the master controller steps through various settings of Vref, at each Vref setting performing a DDR-II write, read, and compare iteration.
[0043] AC BIST as described in this embodiment is run at the maximum speed of the DDR-II Interface ASIC DIA (
[0044] In implementing our invention in the most cost effective way we have used a Digital Temperature Sensor which is an off-the-shelf component. Appropriate off-the-shelf components could be the LM92 Digital Temperature Sensor of National Semiconductor Corporation or alternatively the Philips Semiconductors: HECETA 4 Temperature and voltage monitor, or other like component which we can attach to the memory subsystem package, and to the ASIC via some connection. In the preferred implementation an I2C (Philips Corporation trademark) bus, a 2 bit serial bus with clock and data, as available from Philips Corporation is used. The ASIC monitors the temperature via the LM92 DTS in accordance with the invention by using a DTS attached to the RAM interface ASIC via an I2C bus. I2C is a standard serial bus connection which was developed some 20 years ago for imbedded applications. See http://www-us2.semiconductors.philips.com/i2c/ which illustrates the standard i2c bus. The ASIC constantly monitors the temperature at one or multiple locations (note the description herein related to the use of a Digital-to-Analog Converter (DAC) to provide reference voltage to high frequency receiver/driver circuits for dynamic adjustment of off-chip driver pull-up and pull-down impedance and the use of a Analog-to-Digital Converter (ADC) to monitor Vddq and dynamically update programmable Vref when using the off-chip high-frequency receiver/driver circuits). This offers advantages in reliability in that the running system can verify that the temperature specification is being met by the user. Temperature specification violations can be reported by the system's error reporting system. Variable voltage fans can be connected to the system, so that the fan speed is increased if the temperature rises above a limit, and decreased or shut off if the temperature drops below a threshold. Such fan control has power usage and noise benefits. This system also provides valuable information during bring-up and field failure analysis. Memory defects are difficult to analyze, and having temperature data as part of the failure analysis can reveal temperature-defect relationships.
[0045] As a result of the preferred embodiment, the temperature inside the memory subsystem can vary over time, yet there is now an effective, accurate, and low-cost method used to monitor the temperature. Further, the preferred embodiment also provides a means to control the temperature in addition to monitoring it. This can be done in multiple ways.
[0046] One way is to connect a switch to the over-temperature indicator (OTI) on the ADC. In this method the maximum allowed temperature is written to a register in the ADC, and the ADC is configured to raise or lower the OTI output when the threshold temperature is exceeded. This OTI output is then used to complete a switch to a fan, starting the fan when the temperature exceeds a threshold.
[0047] A more complex method, which allows more precise control of the temperature, adds a DAC to the I2C bus. The DAC output provides an input to a variable speed fan, controlled by the DAC output voltage. The DDR-II Interface ASIC DIA
[0048] While other details of the ADC are described it will be noted here that the ADC along with the related DAC can be used with Samsung DDR-II memory modules (SDRAM) which will contain off-chip data drivers which have variable impedance pull-up and pull-down adjustment. Samsung has introduced programmable off-chip driver impedance with its future release of DDR-II memory modules and this interface is suitable for an interface with these SDRAM modules. This DAC solution enables use of their new commercial product. At a minimum, during system initialization the DDR-II control unit (typically in our DDR-II Interface ASIC DIA
[0049] In connection with the commercial memory devices (SDRAMs as manufactured in accordance with the JEDEC with which the invention is used, reference voltages are typically supplied with physical implementations, such as resistor voltage dividers, which are not dynamically adjustable. Before the described DAC embodiment was developed if a Vref had to be modified in this environment, we had to perform a physical rework to the system (typically a printed circuit board with mounted devices), which means the system must be powered off, cards removed, reworked, and reinstalled. This DAC invention enables real-time, dynamic adjustment of Vref, both at the time of system initialization and while the memory subsystem is running normal operations.
[0050] Referring now to the related use of an Analog-to-Digital Converter (ADC) to monitor Vddq and dynamically update programmable Vref when using high-frequency receiver/driver circuits, the Analog-to-Digital Converter (ADC) has its analog input connected to vddq, and provides digital output to our DDR-II Interface ASIC DIA
[0051] Configuration registers enable the equation for Vref to be varied as a function of Vddq. In the preferred embodiment as shown, Vref=1/n Vddq+OFFSET, where n can be programmed as 1, 2, 4, or 8, and OFFSET is a signed binary number with a bit width one greater than the DAC voltage register. In the embodiment described the DAC has a 10 bit voltage register, which allows changes of Vref as small as (1/1024)*vddq.
[0052] In accordance with the preferred embodiment of the invention the temperature sensing is done at the memory subsystem package, where the ASIC and the memory modules reside. Both surface temperature and ambient air temperature can be measured. Since the Philips I2C bus allows multiple devices to be attached, the temperature can be measured at multiple locations with no additional pin-count for the ASIC. Since the Analog-to-Digital Converter (ADC) of our application is used in the memory subsystem anyway, the temperature monitoring ability is obtained at no cost of additional components in the system. Logic is added to the ASIC to monitor the temperature and since the ASIC is not silicon bound, there is plenty of room for the additional logic added with the ADC application. So no additional hardware is required.
[0053] This invention is useful and implemented in an ASIC standard modular interface which serves as a memory controller for memory chips supplied by various commercial vendors of state of the art memory illustrated by the Samsung DDR memory modules, but it can be implemented with other memory chips of other manufacturers for compatible memory subsystem usage.
[0054] While the preferred embodiment of the invention has been described, it will be understood that those skilled in the art, both now and in the future, may make various improvements and enhancements which fall within the scope of the claims which follow. These claims should be construed to maintain the proper protection for the invention first described.