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[0001] The present invention relates in general to memory devices, and in particular, to interleaved memories readable in a synchronous mode by successive locations with a sequential type of access that is commonly referred to as burst mode, and to standard memories readable in a random access asynchronous mode with fast access times.
[0002] In a standard memory, a read cycle is defined from a request of data initiated by the input of a new address, to the final output of the bits stored in the addressed location (byte, word, etc.). Internally, the reading process evolves through several steps. These steps include the acquisition of the new address, its decoding, the generation of synchronizing pulses for the sensing circuits, and the output of the read data, etc. The fundamental steps of a read cycle and the typical control signals that are used for managing it are depicted in
[0003] The address transition detection (ATD) signal recognizes a change of the address input by the external circuitry, and therefore a new access request, and initiates a new read cycle. After enabling the sense amplifiers by the signal SAenable, an equalization of the sensing circuitry takes place. At the end of which, as timed by the signal EQZ, the effective reading of the memory cells takes place. Finally, after a certain interval of time that may vary from device to device, and by way of a signal SAlatch, the recording of the read data into the latches in cascade to the sense amplifiers takes place. This is from where the read word may be transferred to the output buffers.
[0004] In memory devices designed for a synchronous read mode with a sequential type (burst) of access, the reading process exploits the fact that the reading takes place by successive locations, that is the subsequent memory location to be read, and therefore its address is predictable from the address of the location being currently read. A subgroup of these sequential (burst) synchronous read mode memories is represented by the so-called interleaved memories. A burst access interleaved memory is described in U.S. Pat. No. 5,559,990.
[0005] In this type of memory, the cell array is divided in two semi-arrays or banks, each having its own read circuitry. The read streams of the two banks are thereafter superimposed according to one of the most commonly followed approaches, i.e., outphased from each other. On one of the two banks or semi-array the steps of evaluation and transfer of the data to the output are being performed, and on the other bank or semi-arrays (known as the next location to be addressed) a new read cycle may be started without waiting for the conclusion of the current read cycle that involves the first semi-array.
[0006] In interleaved memories, a basic scheme of which is depicted in
[0007] As it is commonly known, the reading of the two semi-arrays is carried out according to one of two different approaches: 1) a simultaneous reading and multiplexing of the outputs, and 2) time outphased readings.
[0008] According to the first approach, the readings are simultaneous on the two banks. The data read are stored in respective output registers and made available to the outside world in synchronization with an external clock signal. According to the second approach, the readings on the two semi-arrays have an alternate and interleaved evolution on a time base.
[0009] The first approach, though offering a simpler hardware implementation, limits the minimization of the start times of synchronous read cycles. For a better comprehension, it is necessary to consider the basic steps that are performed when passing from an asynchronous read mode to a synchronous read mode. With reference to the scheme of
[0010] If A
[0011] In the first case, it is sufficient to perform a simultaneous reading of the two banks and multiplex the outputs. In the second instance, it is necessary to increment the counter before starting the reading on the bank EVEN.
[0012] Usually, known synchronous memory devices do not make any initial increment and wait for the successive cycle for incrementing both counters, and therefore read the location X+1 of the banks EVEN and ODD. This makes the times of the first read cycle and of the second sequential read cycle at best equal to the asynchronous read mode time of the memory.
[0013] In general, it may be stated that the efficient management of the read processes has a direct influence of the performance of the memory device. Many read-path architectures have been proposed. Known read-path architectures have generally been conceived for responding efficiently to either one or the other of the two modes of operation: asynchronous or synchronous.
[0014] If a memory device is designed to be read in the asynchronous mode, it will generally be provided with a rather simple control circuitry for the read data streams, utilizing adaptive structures such as dummy wordlines and dummy sense amplifiers, while leaving the reading circuitry free to evolve as fast as possible to achieve the shortest asynchronous access delays.
[0015] In contrast, in memory devices designed to function in a burst access mode or in a synchronous read mode, the possibility of making available in output a certain number of words read and stored in advance, permits, after a first asynchronous access, as long as it may be, a series of extremely fast read cycles. In this case though, the control logic must intervene extensively to manage the sense amplifiers which should not be left to evolve freely but be enabled, equalized and read at precise instants established by the control system. Prior European Patent Application No. EP-98830801, filed on Dec. 30, 1998, and Italian Patent Application No. MI99A00248, filed on Nov. 26, 1999, describe burst-mode EPROM devices with the above characteristics.
[0016] A multipurpose memory device that can be used in a broader range of applications, whether requiring the reading of data from the memory in asynchronous mode with random access (as in a standard memory) or the reading of data from the memory in synchronous mode with sequential or burst type access, is disclosed in European Patent Application No. EP-00830068.3, the entire contents of which are incorporated herein by reference, and which is assigned to the assignee of the present invention.
[0017] This device is capable of recognizing the mode of access and the reading that is currently required by the microprocessor and the self-conditioning of its internal control circuitry as a function of such a recognition. This is done to read data in the requested mode without requiring the use of additional external control signals and/or implying a penalization in terms of access time and reading time of data compared to those which, for the same fabrication technology and state of the art design, may be attained with memory devices specifically designed for either one or the other mode of operation, that is, random asynchronous access and burst interleaved synchronous access.
[0018] Depending on the protocol of the control signals, CEn, OEn and ALE, it is possible to manage the memory device both in synchronous mode as well as in asynchronous mode. In particular, if ALE=1 always, the memory device functions as an asynchronous memory. If ALE is a pulsed signal (
[0019] The above mentioned approach, and several other similar approaches, are burdened by the following drawbacks. One drawback is the presence of an additional pin for the additional control signal ALE, which is necessary to catch all external addresses in case of asynchronous access. Another drawback is the incompatibility with standard memory devices in which this additional pin is not expected. A third drawback is the specific protocol that uses the signal OEn as a clock signal for synchronous reading. Yet another drawback is the need of the user to redesign the software and hardware of the system.
[0020] An object of the present invention is to provide a multipurpose memory device that has an interlaced architecture and function, and is fully compatibile with standard memory devices.
[0021] The control logic of the memory device is capable of recognizing the two following situations: a current address consecutive to the previous one, and a current address not consecutive to the previous one.
[0022] In the first case the data is immediately output and the memory device functions in a synchronous mode, where the synchronization is not established by an external clock but by the change of address. In contrast, the second case a new asynchronous reading cycle is started.
[0023] In the architecture of the present invention, there are two totally independent and uncorrelated reading paths for the data stored in the two banks or semi-arrays of an interlaced memory device (EVEN and ODD). The memory functions in two different modes, synchronous and asynchronous, using a circuit for detecting address transitions that act as a synchronous clock of the system, which lets the control circuit of the memory device recognize the required access mode by enabling the comparison of the currently input address with the previous one.
[0024] Each time that an address not consecutive to the previous one is input, the device internally starts two outphased and independent read cycles relative to the current address and to the immediately successive address. This is done in order to be ready to carry out an eventual possible successive synchronous reading cycle. The device is capable of switching to a synchronous read mode whenever consecutive addresses are input, thus halving the access time.
[0025] The memory device of the invention is able to recognize internally whether the currently input address is consecutive to the previous address or not, and in the negative case it produces a signal UPDATE that is used to update the pointers to the memory cells, EVEN_COUNTER and ODD_COUNTER.
[0026] The counters of the two banks are incremented separately in order to outphase the readings on the two banks starting from the first read cycle. The two distinct read processes, the one on the pointed bank and the other on the bank not being pointed to, respectively, are congruent with each other and are alternated and interleaved in time.
[0027] According to a preferred embodiment of the invention, the memory device comprises a buffer for loading data to be output, and is provided with means that precharge the output node to an intermediate voltage between the voltages corresponding to the two possible logic states of a data, thus reducing noise and optimizing the transfer time.
[0028] The different aspects and advantages of the invention will be even more evident through a detailed description of an embodiment of the invention and by referring to the attached drawings in which:
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[0043] The memory device of the present invention is a multipurpose device that allows for a synchronous or asynchronous access using the same access protocol of a standard memory device, as depicted in
[0044] In an asynchronous cycle the two independent arrays of sense amplifiers SENSE_EVEN, SENSE_ODD of the two memory banks are enabled at the same time by the pulse UPDATE, but only the sense amplifiers of the memory bank in a state of priority identified by the logic value of the least significant bit A
[0045] In the phase that immediately follows the start of a read cycle, when it is acknowledged that the address has been acquired in the counters and the carry has propagated, if the first bank in priority is the ODD bank the block CONTROL_LOGIC generates a first increment pulse for the counter EVEN on the relative bank EVEN of which the read cycle pertaining to the next successive address takes place.
[0046] By doing so, reading of the bank having priority evolves freely because this bank will be called first to deliver the data read to the output. At the same time the incremented address for the successive reading on the other bank is prepared. This is the start of a burst interleaved synchronous read process.
[0047] The same increment signal for the bank that is not in priority stimulates the respective circuit SENSE CTRL TIMING managing the sense amplifiers SENSE_EVEN, SENSE_ODD. This is so that the array of sense amplifiers, the managing circuit SENSE CTRL TIMING, the dummy equalization structures, etc., will process the increment pulse as a normal request of an asynchronous reading and will be restarted, while the sense amplifiers of the bank in priority, being independent from those of the other bank, will continue to evolve through the reading phase.
[0048] The control circuit will continue to monitor the signals coming from the block SENSE CTRL TIMING of the bank in priority and, as soon as it generates the signal DLATCH for transferring the read data to the latch in cascade of the sense amplifiers, will produce the pulse LOAD for loading the read data in the output latch. The falling (trailing) edge of the pulse LOAD establishes that the bank that has just terminated the reading is ready to start a new read cycle. A new increment signal will be produced only for the counter of this bank, and besides stimulating the generation of the new internal address, will restart the reading exclusively for this bank.
[0049] Once again the control circuit waits for information coming from the external input bus or from the self-adapting structure of the SENSE CTRL TIMING to enable the outputting of data of the other bank. This is done by the generation of a new pulse LOAD or the start a new asynchronous read cycle. The above described operations may repeat themselves indefinitely, alternating the sequence.
[0050] The signal OEn (Output Enable) is a low-active external command for enabling the output buffers. Thus, if the signal assumes the logic level 0, the data of the bank in priority are transferred to the output buffers and are made available external the memory device.
[0051] The circuit for detecting address transitions TRANSITION_DETECTOR produces a detection pulse ATD_ADD starting from which the pulse signals that allow the comparison between the external address and the address stored in the address counters are generated. The address consecutive to the one of the last completed readings is present in the counter of the bank that is currently not in priority. If the external address is equal to this address, the relative data can be output and a new reading on this bank may start again.
[0052] Each time the external address EXT_ADD is modified, the block TRANSITION_DETECTOR produces a pulse ATD_ADD that is suitably delayed and stretched by the block DELAY&STRETCH. This block produces the signal COMPARE as a delayed and stretched version of the pulse ATD_ADD in order to account for the processing time of the signal NEW_ADDR.
[0053] At the same time the external address is compared with the address stored in counters of both banks. If the address is different from the one contained in both counters, the signal NEW_ADDR that represents the result of the comparison switches to 1. This indicates to the system that an address not consecutive to the previous one has been input and that an asynchronous reading cycle is required. Therefore, if NEW_ADDR=1 and COMPARE=1 then UPDATE is active, thus enabling the storing of the new address in the counters by enabling the pass gates that couple the output of INPUT_BUFFERS to the counters themselves. This also stimulates the blocks SENSE CTRL TIMING that manage the sense amplifiers SENSE_EVEN, SENSE_ODD of the two blocks during the various phases of the read cycle.
[0054] The blocks SENSE CTRL TIMING may be similar to that described in European Patent Application No. EP-00830068.3. That is, they are self-adaptive structures suitable to manage the timing of the read phases of the sense amplifiers. If A
[0055] In any case, in both situations the bank in priority (EVEN if A
[0056] Because at least one of the address counters contains “a copy”of the external address, the result of the comparison between the external address and the address stored in the counters will be positive and when COMPARE=1, NEW_ADDR=0. In this case, unlike in the previous case, the signal UPDATE remains disabled.
[0057] On the other side, because NEW_ADDR=0 when COMPARE=1 a read stimulation signal NEW_SYNC is produced by the AND gate in cascade to the block DELAY&STRETCH. The NEW SYNC signal contains the information relative to the fact that the user requires new data and that the address in which it is stored is consecutive to the previous one. Therefore, if the reading relative to this new address is terminated, that is, the sense amplifiers have already placed into the relative DATA_REGISTER latch the read data, the data is output and a new read cycle is started onto the same bank. This is after having incremented its address counter. If on the contrary the reading has not yet finished, the system waits for the end of the read cycle.
[0058] The memory device of the invention, if used always in an asynchronous mode, could be performing slightly less than a standard asynchronous memory device because of the delay introduced in the phase that immediately follows the change of the external address in order to recognize the required read mode, i.e., synchronous or asynchronous.
[0059] To prevent this drawback, a buffer provided with means for pre-charging the output node is used, as the one depicted in
[0060] Referring to
[0061] The precharge phase of the output node stops when the block CONTROL_LOGIC enables the output of the data read by the sense amplifiers by way of the signals LOAD_EVEN and LOAD_ODD. This phase is further conditioned by the state of the signal DISABLE that sets in a high impedance state the outputs, and depends from the state of signals CEn and OEn. During the precharge of the output node and when the outputs are set in a high impedance state, the path from the DATA_REGISTER to the output buffer is interrupted because the signal OUTLATCH is forced low by the NOR gate input with the above mentioned signals PRE_CHARGE and DISABLE.
[0062] By monitoring the state of the external signals, CEn, OEn and A
[0063] The block CONTROL_LOGIC is formed by three main circuits, as depicted in
[0064] The single functional circuits are described below in a more detailed manner. The LOAD PULSER circuit has the following characteristics. It produces the pulses necessary for loading the read data in the latch that precedes the output buffer. During the first asynchronous reading it is stimulated by the signal DLATCH to produce the first load pulse LOAD. In the successive synchronous readings it is stimulated by the switching of the external address monitored by way of the signal NEW_SYNC. This circuit is also able to synchronize the user request of new data with its availability, and depending on the address A
[0065] A block diagram of a possible embodiment of the circuit is depicted in
[0066] In the successive synchronous readings, LOAD_STIM coincides with the signal OK_LOAD (FIRST=0) that is produced when any one of the following conditions is verified: change of the external address with a new address consecutive to the previous one (NEW_SYNC=1); external enabling of the output bus (OE=1); and end of the reading on the bank in priority, i.e., the reading relative to the new address (DLATCH of the bank in priority=0).
[0067] The latch SR that produces the signal SYNC_OK is set every time a new address successive to the previous one is input (NEW_SYNC=1) and is reset when the output registers are updated by a LOAD pulse. The block ONLY_FALLING_EDGE_DELAY delays only the falling edge of the start signal UPDATE of an asynchronous reading by producing the signal UPDATE_DEL. This signal is logically inverted and ANDed with the output of the pulse generator PULSER, and its function is to interrupt an eventual pulse LOAD when a new asynchronous reading starts. Finally the demultiplexer controlled by the state of A
[0068] The main functions of the circuit INC PULSER are as follows. The pulses that are necessary to increment the addresses stored in the address counters of the two banks are produced and the asynchronous readings are started. The first increment is produced considering the propagation delay of the carry through the counter. The first increment is suppressed if the asynchronous reading starts from an address on the EVEN bank. The main functions also include producing at the end of the respective read cycles the next increments for each of the two banks, producing a signal FIRST capable of discriminating the first asynchronous reading from the successive synchronous readings, and updating the pointer to the banks EVEN and ODD as a function of the address A
[0069] The circuit includes a pulse generator PULSER stimulated by a signal output by the multiplexer formed by the two pass gates PG
[0070] The signal FIRST is generated by a latch SR, set by the start signal UPDATE of the asynchronous reading and reset by the signal LOAD that enables the loading of the data read from the sense amplifiers, thus stating the end of the first asynchronous read cycle. Therefore, during the first asynchronous reading, the pulse generator PULSER is stimulated by a replica of the signal UPDATE, delayed by the block CARRY_DELAY, to account for the propagation delay of the carry bit through the counter.
[0071] During the following synchronous readings, PULSER is stimulated by the logic negation of the signal LOAD to allow, at the end of the pulse LOAD, the increment of the address counter and the start of a new reading on the bank that has just terminated the current read cycle.
[0072] The pulse output by the pulse generator is logically filtered in the following situations. In the case of a first asynchronous reading EVEN (A
[0073] The block ONLY_FALLING_EDGE_DELAY delays only the falling edge of the signal UPDATE producing the signal UPDATE_DEL that, when it is at the high logic level, filters the increment. The pulse INC is correctly directed to the banks EVEN and ODD through the demultiplexer formed by the AND gates I
[0074] The main function of the restart circuit UPDATE LOGIC is to recognize the situations in which the memory must start a new asynchronous reading cycle by producing a start signal of asynchronous reading (OK_UPDATE=1). A possible embodiment of this restart circuit is depicted in
[0075] An asynchronous reading cycle must start in the following cases. A first case is to resume from a stand-by state. In this case the block FALLING_EDGE_TRANSITION_DETECTOR produces, on the falling edge of the external command of enablement of the memory device CEn, a control pulse ATD_CEn that is logically negated and ORed with the signal START_UPDATE, thus generating the signal for starting an asynchronous reading cycle OK_UPDATE. A second case is the loss of synchronization caused by an excessive frequency with which the user requires data. For example, the user changes the address before the end of a first asynchronous reading cycle. In this situation the reading must restart and the state machine must return to its initial state. During synchronous mode, the user requires new data (changes the address X in X+1) before the cycle relative to the previous reading is completed. That is, the increment pulse for the address counter is produced while the data X is yet to be loaded in the output.
[0076] Each time the external address changes, a pulse ATD is generated and the block UPDATE_LOGIC must either produce the signal OK_UPDATE depending on a state of the memory device. The irregular situation in which the user requires new data (by changing the external address) before the end of the reading relative to the current address with the consequent outputting of the read data and the incrementing of the counter of the bank in priority, is recognized by detecting two consecutive pulses ATD not interleaved by a general increment pulse INC.
[0077] In fact, in the first asynchronous cycle, if during the reading the user inputs a different address, a new pulse ATD preceding the general increment pulse INC of the bank in priority is produced. The eventual first pulse INC provided to the bank not in priority is filtered by the signal FIRST by the gate I
[0078] Similarly, during synchronous reading, if the user changes two or more times the input address before the memory is able to load in output the read data and to restart the reading in the memory bank (INC=1), the generation of two or more successive ATD pulses, not interleaved with general increment pulses INC, makes the circuit detect an anomalous situation and restart a new asynchronous reading (OK_UPDATE=1). The frequency with which data are requested is greater than the maximum frequency of the system. Therefore, when the address stabilizes itself, the memory correctly provides the respective data and this happens because for such an address input out of synchronization an asynchronous reading is carried out.
[0079] In the LATCH L
[0080] In particular, a pulse ATD after having been logically negated sets Q
[0081] The signal Q
[0082] This does not happen if the new pulse ATD is preceded by a pulse INC that resets the latch L
[0083] The situation in which the new ATD, produced by an abrupt change of address by the user, causes the generation of a pulse OK_UPDATE, is depicted in