DETAILED DESCRIPTION
[0021] FIG. 1 depicts a schematic illustration of a wafer processing system 10 that can be used to form refractory metal nitride barrier layers in accordance with embodiments described herein. The system 10 comprises a process chamber 100 , a gas panel 130 , a control unit 110 , along with other hardware components such as power supplies 106 and vacuum pumps 102 . The salient features of process chamber 100 are briefly described below.
[0022] Chamber 100
[0023] The process chamber 100 generally houses a support pedestal 150 , which is used to support a substrate such as a semiconductor wafer 190 within the process chamber 100 . Depending on the specific process, the semiconductor wafer 190 can be heated to some desired temperature prior to layer formation.
[0024] In chamber 100 , the wafer support pedestal 150 is heated by an embedded heater 170 . For example, the pedestal 150 may be resistively heated by applying an electric current from an AC power supply 106 to the heater element 170 . The wafer 190 is, in turn, heated by the pedestal 150 , and can be maintained within a desired process temperature range of, for example, about 20° C. to about 600° C.
[0025] A temperature sensor 172 , such as a thermocouple, is also embedded in the wafer support pedestal 150 to monitor the temperature of the pedestal 150 in a conventional manner. For example, the measured temperature may be used in a feedback loop to control the electric current applied to the heater element 170 by the power supply 106 , such that the wafer temperature can be maintained or controlled at a desired temperature that is suitable for the particular process application. The pedestal 150 is optionally heated using radiant heat (not shown).
[0026] A vacuum pump 102 is used to evacuate process gases from the process chamber 100 and to help maintain the desired pressure inside the chamber 100 . An orifice 120 is used to introduce process gases into the process chamber 100 . The dimensions of the orifice 120 are variable and typically depend on the size of the process chamber 100 .
[0027] The orifice 120 is coupled to a gas panel 130 via a valve 125 . The gas panel 130 provides process gases from two or more gas sources 135 , 136 to the process chamber 100 through orifice 120 and valve 125 . The gas panel 130 also provides a purge gas from a purge gas source 138 to the process chamber 100 through orifice 120 and valve 125 .
[0028] A control unit 110 , such as a computer, controls the flow of various process gases through the gas panel 130 as well as valve 125 during the different steps of a wafer process sequence. Illustratively, the control unit 110 comprises a central processing unit (CPU) 112 , support circuitry 114 , and memories containing associated control software 116 . In addition to the control of process gases through the gas panel 130 , the control unit 110 is also responsible for automated control of the numerous steps required for wafer processing—such as wafer transport, temperature control, chamber evacuation, among other steps.
[0029] The control unit 110 may be one of any form of general purpose computer processor that can be used in an industrial setting for controlling various chambers and sub-processors. The computer processor may use any suitable memory, such as random access memory, read only memory, floppy disk drive, hard disk, or any other form of digital storage, local or remote. Various support circuits may be coupled to the computer processor for supporting the processor in a conventional manner. Software routines as required may be stored in the memory or executed by a second processor that is remotely located. Bi-directional communications between the control unit 110 and the various components of the wafer processing system 10 are handled through numerous signal cables collectively referred to as signal buses 118 , some of which are illustrated in FIG. 1 .
[0030] Refractory Metal Nitride Layer Formation FIGS. 2 a - 2 c illustrate one preferred embodiment of refractory metal nitride layer formation for fabrication of an interconnect structure. In general, the substrate 200 refers to any workpiece upon which film processing is performed, and a substrate structure 250 is used to generally denote the substrate 200 as well as other material layers formed on the substrate 200 . Depending on the specific stage of processing, the substrate 200 may be a silicon semiconductor wafer, or other material layers which have been formed on the wafer. FIG. 2 a , for example, shows a cross-sectional view of a substrate structure 250 , having a material layer 202 thereon. In this particular illustration, the material layer 202 may be an oxide (e.g. silicon dioxide). The material layer 202 has been conventionally formed and patterned to provide contact holes 202 H extending to the top surface 200 T of the substrate 200 .
[0031] FIG. 2 b shows a refractory metal nitride layer 204 conformally formed on the substrate structure 250 . The refractory metal nitride layer 204 is formed by chemisorbing monolayers of a hydrazine-based compound and at least one refractory metal compound on a substrate structure 250 . The monolayers are chemisorbed by sequentially providing a hydrazine-based compound and one or more refractory metal compounds to a process chamber.
[0032] In a first sequential chemisorption process, monolayers of a hydrazine-based compound and one refractory metal compound are alternately chemisorbed on a substrate 300 as shown in FIGS. 3 a - 3 d. FIG. 3 a depicts a cross-sectional view of a substrate 300 , which may be in a stage of integrated circuit fabrication. A monolayer of a hydrazine-based compound 305 is chemisorbed on the substrate 300 by introducing a pulse of a hydrazine-based gas into a process chamber similar to that shown in FIG. 1 . The hydrazine-based compound typically combines nitrogen (N) atoms 310 with one or more reactive species a 315 . During refractory metal nitride layer formation, the reactive species a 315 form by-products that are transported from the substrate surface by the vacuum system.
[0033] Chemisorption processes used to absorb the monolayer of the hydrazine-based compound 305 are self-limiting, in that only one monolayer may be chemisorbed onto the substrate 300 surface during a given pulse. Only one monolayer of the hydrazine-based compound may be chemisorbed on the substrate because the substrate has a limited surface area. This limited surface area provides a finite number of sites for chemisorbing the hydrazine-based compound. Once the finite number of sites are occupied by the hydrazine-based compound, further chemisorption of any hydrazine-based compound will be blocked.
[0034] Suitable hydrazine-based compounds may include, for example, hydrazine (N 2 H 4 ), monomethyl hydrazine (CH 3 N 2 H 3 ), dimethyl hydrazine (C 2 H 6 N 2 H 2 ), t-butylhydrazine (C 4 H 9 N 2 H 3 ), phenylhydrazine (C 6 H 5 N 2 H 3 ), 2,2′-azoisobutane ((CH 3 ) 6 C 2 N 2 ), ethylazide (C 2 H 5 N 3 ), as well as combinations thereof.
[0035] After the monolayer of the hydrazine-based compound is chemisorbed onto the substrate 300 , excess hydrazine-based compound is removed from the process chamber by introducing a pulse of a purge gas thereto. Purge gases such as, for example helium (He), argon (Ar), nitrogen (N 2 ), and hydrogen (H 2 ), among others may be used.
[0036] After the process chamber has been purged, a pulse of one refractory metal compound is introduced into the process chamber. Referring to FIG. 3 b , a monolayer of the refractory metal compound 307 is chemisorbed on the monolayer of hydrazine-based compound 305 . The refractory metal compound typically combines refractory metal atoms M 320 with one or more reactive species b 325 .
[0037] The chemisorbed monolayer of the refractory metal compound 307 reacts with the monolayer of hydrazine-based compound 305 to form a refractory metal nitride layer 309 , as shown in FIG. 3 c . The reactive species a 315 and b 325 form by-products ab 330 that are transported from the substrate surface by the vacuum system. The reaction of the refractory metal compound 307 with the hydrazine-based compound 305 is self-limited, since only one monolayer of the hydrazine-based compound was chemisorbed onto the substrate surface.
[0038] The refractory metal compound may include refractory metals such as, for example, titanium (Ti), tungsten (W), tantalum (Ta), zirconium (Zr), hafnium (Hf), molybdenum (Mo), niobium (Nb), vanadium (V), and chromium (Cr), among others combined with reactive species such as, for example chlorine (Cl), fluorine (F), bromine (Br), and iodine (I). Titanium tetrachloride (TiCl 4 ), tungsten hexafluoride (WF 6 ), tantalum pentachloride (TaCl 5 ), zirconium tetrachloride (ZrCl 4 ), hafnium tetrachloride (HfCl 4 ), molybdenum pentachloride (MoCl 5 ), niobium pentachloride (NbCl 5 ), vanadium pentachloride (VCl 5 ), chromium tetrachloride (CrCl 4 ), titanium iodide (TiI 4 ), titanium bromide (TiBr 4 ), among others may be used as the refractory metal compound. Suitable refractory metal compounds may also include metal organic compounds such as, for example, tetrakis(dimethylamido)titanium (TDMAT) and pentakis(dimethylamido) tantalum (PDMAT), tetrakis(diethylamido)titanium (TDEAT), tungsten hexacarbonyl (W(CO) 6 ), tungsten hexachloride (WCl 6 ), tetrakisdiethylamido)titanium (TDEAT), pentakisdiethylamido)tantalum (PDEAT), among others.
[0039] After the monolayer of the refractory metal compound is chemisorbed on the monolayer of hydrazine-based compound 305 , any excess refractory metal compound is removed from the process chamber by introducing another pulse of the purge gas therein. Thereafter, as shown in FIG. 3 d , the refractory metal nitride layer deposition sequence of alternating monolayers of the hydrazine-based compound and the refractory metal compound are repeated until a desired refractory metal nitride layer 309 thickness is achieved.
[0040] In FIGS. 3 a - 3 d , refractory metal nitride layer formation is depicted as starting with the chemisorption of a monolayer of a hydrazine-based compound on the substrate followed by a monolayer of a refractory metal compound. Alternatively, the nitride layer formation may start with the chemisorption of a monolayer of a refractory metal compound on the substrate followed by a monolayer of the hydrazine-based compound.
[0041] The pulse time for each pulse of the hydrazine-based compound, the refractory metal compound, and the purge gas is variable and depends on the volume capacity of the deposition chamber as well as the vacuum system coupled thereto. Similarly, the time between each pulse is also variable and depends on the volume capacity of the process chamber as well as the vacuum system coupled thereto.
[0042] In general, the alternating monolayers may be chemisorbed at a substrate temperature between about 20° C. and 600° C., and a chamber pressure less than about 100 torr. A pulse time of less than about 5 seconds for hydrazine-based compounds, and a pulse time of less than about 2 seconds for the refractory metal compounds are typically sufficient to chemisorb the alternating monolayers that comprise the refractory metal nitride layer on the substrate. A pulse time of less than about 2 seconds for the purge gas is typically sufficient to remove the reaction by-products as well as any residual materials remaining in the process chamber.
[0043] In a second chemisorption process, a hydrazine-based compound and two or more refractory metal compounds are sequentially chemisorbed on a substrate to form a composite refractory metal nitride layer, as shown in FIGS. 4 a - 4 f . FIG. 4 a depicts a cross-sectional view of a substrate 400 , which may be in a stage of integrated circuit fabrication. A self-limiting monolayer of a hydrazine-based compound 405 is chemisorbed on the substrate 400 by introducing a pulse of a hydrazine-based compound into a process chamber similar to that shown in FIG. 1 according to the process conditions described above with reference to FIGS. 3 a - 3 d . The hydrazine-based compound combines nitrogen atoms (N) 410 with one or more reactive species a 1 415 .
[0044] After the monolayer of the hydrazine-based compound 405 is chemisorbed onto the substrate 400 , excess hydrazine-based compound is removed from the process chamber by introducing a pulse of a purge gas thereto.
[0045] Referring to FIG. 4 b , after the process chamber has been purged, a pulse of a first refractory metal compound M 1 b 1 , 407 is introduced into the process chamber. A layer of the first refractory metal compound 407 is chemisorbed on the monolayer of hydrazine-based compound 405 . The first refractory metal compound typically combines refractory metal atoms M 1 420 with one or more reactive species b 1 425 .
[0046] The chemisorbed monolayer of the first refractory metal compound 407 reacts with the monolayer hydrazine-based compound 405 to form a refractory metal nitride layer 409 , as shown in FIG. 4 c . The reactive species a 1 415 and b 1 425 form by-products a 1 b 1 430 that are transported from the substrate surface by the vacuum system.
[0047] After the monolayer of the first refractory metal compound 407 is chemisorbed onto the monolayer of the hydrazine-based compound 405 , excess first refractory metal compound M 1 b 1 is removed from the process chamber by introducing a pulse of the purge gas therein.
[0048] Thereafter, a pulse of the hydrazine-based compound is introduced into the process chamber. A second monolayer of the hydrazine-based compound 405 is chemisorbed on the monolayer of first refractory metal compound 407 , as shown in FIG. 4 d . The chemisorbed monolayer of the hydrazine-based compound 405 reacts with the monolayer of first refractory metal compound 407 to form the refractory metal nitride layer. The reactive species a 1 415 and b 1 425 form by-products a 1 b 1 430 that are transported from the substrate surface by the vacuum system.
[0049] After the monolayer of the hydrazine-based compound 405 is chemisorbed on the monolayer of first refractory metal compound 407 , excess hydrazine-based compound is removed from the process chamber by introducing a pulse of a purge gas thereto.
[0050] Referring to FIG. 4 e , after the process chamber has been purged, a pulse of a second refractory metal compound M 2 b 2 is introduced into the process chamber. A layer of the second refractory metal compound 411 is chemisorbed on the monolayer of the hydrazine-based compound 405 . The second refractory metal compound typically combines refractory metal atoms M 2 440 with one or more reactive species b 2 455 .
[0051] The chemisorbed monolayer of the second refractory metal compound 411 reacts with the monolayer of hydrazine-based compound 405 , as shown in FIG. 4 f to form a composite refractory metal nitride layer 480 . The reactive species b 2 455 and a 1 415 form by-products a 1 b 2 470 that are transported from the substrate surface by the vacuum system.
[0052] After the monolayer of the second refractory metal compound 411 is chemisorbed on the second monolayer of the hydrazine-based compound 405 , excess second refractory metal compound M 2 b 2 is removed from the process chamber by introducing a pulse of the purge gas therein.
[0053] Thereafter, the refractory metal nitride layer deposition sequence of alternating monolayers of the hydrazine-based compound and the two refractory metal compounds M 1 b 1 and M 2 b 2 are repeated until a desired refractory metal nitride layer thickness is achieved.
[0054] In FIGS. 4 a - 4 f , refractory metal nitride layer formation is depicted as starting with the chemisorption of a monolayer of a hydrazine-based compound on the substrate followed by a monolayer of a first refractory metal compound, followed by a hydrazine-based compound, and then a second refractory metal compound. Alternatively, the nitride layer formation may start with the chemisorption of monolayers of either of the two refractory metal compounds onto the substrate followed by monolayers of the hydrazine-based compound. Optionally, monolayers of more than two refractory metal compounds may be chemisorbed on the substrate surface.
[0055] In a third chemisorption process, the hydrazine-based compound and two or more refractory metal compounds are alternately chemisorbed on the substrate to form a composite refractory metal layer, as illustrated in FIGS. 5 a - 5 d . FIG. 5 a depicts a cross-sectional view of a substrate 500 , which may be in a stage of integrated circuit fabrication. A self-limiting monolayer of a first refractory metal compound 507 is chemisorbed on the substrate 500 by introducing a pulse of a first refractory metal compound M 1 b 1 507 into a process chamber similar to that shown in FIG. 1 according to the process conditions described above with reference to FIGS. 3 a - 3 d . The first refractory metal compound M 1 b 1 combines refractory metal atoms M 1 520 with one or more reactive species b 1 535 .
[0056] After the monolayer of the first refractory metal compound 507 is chemisorbed onto the substrate 500 , excess first refractory metal compound is removed from the process chamber by introducing a pulse of a purge gas thereto.
[0057] Referring to FIG. 5 b , after the process chamber has been purged, a pulse of a second refractory metal compound M 2 b 2 is introduced into the process chamber. A layer of the second refractory metal compound 511 is chemisorbed onto monolayer of the first refractory metal compound 507 . The second refractory metal compound M 2 b 2 combines refractory metal atoms M 2 540 with one or more reactive species b 2 525 .
[0058] After the monolayer of the second refractory metal compound 511 is chemisorbed onto the monolayer of the first refractory metal compound 507 , excess second refractory metal compound M 2 b 2 is removed from the process chamber by introducing a pulse of the purge gas therein.
[0059] A pulse of a hydrazine-based compound is then introduced into the process chamber. A monolayer of the hydrazine-based compound 505 is chemisorbed on the second refractory metal monolayer 511 , as shown in FIG. 5 c . The hydrazine-based compound combines nitrogen atoms (N) 510 with one or more reactive species a 1 515 .
[0060] The chemisorbed monolayer of hydrazine-based compound 505 reacts with both the first refractory metal monolayer 507 as well as the second refractory metal monolayer 511 to form a composite refractory metal nitride layer 509 . The reactive species a 1 515 , b 1 535 , and b 2 525 form byproducts a 1 b 2 530 and a 1 b 1 550 that are transported from the substrate 500 surface by the vacuum system.
[0061] After the monolayer of the hydrazine-based compound 505 is chemisorbed onto the second refractory metal monolayer 511 , excess hydrazine-based compound is removed from the process chamber by introducing a pulse of a purge gas therein.
[0062] Referring to FIG. 5 d , the refractory metal nitride layer deposition sequence of alternating monolayers of the hydrazine-based compound and the two refractory metal compounds M 1 b 1 and M 2 b 1 are repeated until a desired refractory metal nitride layer thickness is achieved.
[0063] In FIGS. 5 a - 5 d , refractory metal nitride layer formation is depicted as starting with the chemisorption of the first refractory metal monolayer on the substrate followed by monolayers of the second refractory metal compound and the hydrazine-based compound. Alternatively, the refractory metal nitride layer formation may start with the chemisorption of the monolayer of hydrazine-based compound on the substrate followed by the monolayers of the two refractory metal compounds. Optionally, monolayers of more than two refractory metal compounds may be chemisorbed on the substrate surface.
[0064] The sequential deposition processes described above advantageously provide good step coverage for the refractory metal nitride layer, due to the monolayer chemisorption mechanism used for forming such layer. In particular, refractory metal nitride layer formation using the monolayer chemisorption mechanism is believed to contribute to a near perfect step coverage over complex substrate topographies.
[0065] Furthermore, in chemisorption processes, since a monolayer may be adsorbed on the topographic surface, the size of the deposition area is largely independent of the amount of precursor gas remaining in the reaction chamber once a monolayer has been formed.
[0066] Referring to FIG. 2 c , after the formation of the nitride layer 204 , a contact layer 206 may be formed thereon to complete the interconnect structure. The contact layer 206 is preferably selected from the group of aluminum (Al), copper (Cu), tungsten (W), and combinations thereof.
[0067] The contact layer 206 may be formed, for example, using chemical vapor deposition (CVD), physical vapor deposition (PVD), or a combination of both CVD and PVD. For example, an aluminum (Al) layer may be deposited from a reaction of a gas mixture containing dimethyl aluminum hydride (DMAH) and hydrogen (H 2 ) or argon (Ar) or other DMAH containing compounds, a CVD copper layer may be deposited from a gas mixture containing Cu +2 (hfac) 2 (copper hexafluoro acetylacetonate), Cu +2 (fod) 2 (copper heptafluoro dimethyl octanediene), Cu +1 hfac TMVS (copper hexafluoro acetylacetonate trimethylvinylsilane), or combinations thereof, and a CVD tungsten layer may be deposited from a gas mixture containing tungsten hexafluoride (WF 6 ). A PVD layer is deposited from a copper target, an aluminum target, or a tungsten target.
[0068] FIGS. 6 a - 6 c illustrate an alternate embodiment of refractory metal layer formation for integrated circuit fabrication of an interconnect structure. In general, the substrate 600 refers to any workpiece upon which film processing is performed, and a substrate structure 650 is used to generally denote the substrate 600 as well as other material layers formed on the substrate 600 . Depending on the specific stage of processing, the substrate 600 may be a silicon semiconductor wafer, or other material layer, which has been formed on the wafer. FIG. 6 a , for example, shows a cross-sectional view of a substrate structure 650 , having a material layer 602 thereon. In this particular illustration, the material layer 602 may be an oxide (e. g., silicon dioxide). The material layer 602 has been conventionally formed and patterned to provide a contact hole 602 H extending to the top surface 600 T of the substrate 600 .
[0069] FIG. 6 b shows two refractory metal nitride layers 604 , 606 conformably formed on the substrate structure 650 . The refractory metal nitride layers 604 , 606 are formed by chemisorbing monolayers of a hydrazine-based compound and one or more refractory metal compounds on the substrate structure 650 as described above with reference to FIGS. 3 a - 3 d . The two refractory metal nitride layers 604 , 606 may each comprise one or more refractory metals. The thicknesses of the two refractory metal nitride layers 604 , 606 may be varied depending on the specific stage of processing. Each refractory metal nitride layer 604 , 606 may, for example, have a thickness in a range of about 200 Å to about 5000 Å.
[0070] Referring to FIG. 6 c , after the formation of the two refractory metal nitride layers 604 , 606 , a contact layer 608 may be formed thereon to complete the interconnect structure. The contact layer 608 is preferably selected from the group of aluminum (Al), copper (Cu), tungsten (W), and combinations thereof.
[0071] The specific process conditions disclosed in the above discussion are meant for illustrative purposes only. Other combinations of process parameters such as precursor and inert gases, flow ranges, pressure and temperature may also be used in forming the nitride layer of the present invention.
[0072] Although several preferred embodiments, which incorporate the teachings of the present invention, have been shown and described in detail, those skilled in the art can readily devise many other varied embodiments that still incorporate these teachings.