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[0001] The invention relates to a projection exposure system having a reticle which operates in reflection.
[0002] Projection exposure systems having a reflective reticle have been used in the past, inter alia, together with 1:1 Dyson objectives. These projection exposure systems are described in the following publications:
[0003] a) Owen et al, “⅛ μm optical lithography” J. Vac. Sci. B 10 (1992), pages 3032 to 3036, especially Parts B and C;
[0004] b) Pease et al, “Lithography for 0.25 μm and below . . . ” IEEE Symp. VLSI Technology (1992), pages 116 and 117;
[0005] c) Jeong et al, “Optical projection system . . . ” J. Vac. Sci. B 11 (1993), pages 2675 to 2679; and,
[0006] d) U.S. Pat. No. 4,964,705.
[0007] The incoupling of the illumination takes place via a partially transmitting mirror as shown, for example, in U.S. Pat. No. 4,964,705 (
[0008] Reflective reticles are used exclusively in the area of lithography utilizing soft X-rays (EUVL). The beam splitting of illuminating and imaging beam paths is realized by an inclined incidence of the illumination. Beam splitter cubes or beam splitter plates are not used. The objectives are pure mirror objectives having an non-axial symmetrical beam path. The inclined incidence of the illuminating light on the reflective reticle has the disadvantage that the raised mask struts lead to vignetting.
[0009] Japanese patent publication 9-017719 discloses a wafer projection exposure system having a reflex LCD as a special reticle. According to
[0010] U.S. Pat. No. 5,956,174 discloses a catadioptric microscope objective wherein the illuminating light is coupled in via a beam splitter cube between the microscope objective and the tube lens. This type of illumination is conventional in reflected light microscopes. The illuminating field sizes are only in the order of magnitude of 0.5 mm.
[0011] Catadioptric systems for wavelengths of 193 nm and 157 nm are known. Catadioptric projection objectives having beam splitter cubes without an intermediate image are shown, for example, in U.S. Pat. Nos. 5,742,436 and 5,880,891 incorporated herein by reference.
[0012] Catadioptric projection objectives having a beam splitter cube and an intermediate image are disclosed in German patent publication 199 54 727.0 (corresponding to U.S. patent application Ser. No. ______ , filed ______ , Docket No. 99067 P).
[0013] Illuminating devices for microlithography are disclosed in U.S. Pat. No. 5,675,401 and U.S. patent application Ser. No. 09/315,267, filed May 20, 1999. So-called REMA objectives for imaging a reticle masking device (REMA) into the plane of the reticle are disclosed in U.S. Pat. No. 5,982,558 and U.S. patent application Ser. No. 09/125,621, filed Dec. 3, 1997, also incorporated herein by reference. With these objectives, inter alia, the entry pupil of the downstream projection objective is illuminated.
[0014] The production of transmission reticles (that is, masks operated in transmission for microlithography) is difficult for deep ultraviolet wavelengths, especially 157 nm, inter alia, because of suitable transmitting carrier materials. The materials CaF
[0015] The alternative are reflective reticles. To reduce the requirements imposed on the reticle, it is advantageous when the projection objective is configured as a reduction objective and the reticle is imaged so as to be demagnified. The reticle can then be provided with larger structures.
[0016] In conventional reduction objectives, the use of reflective reticles is not easily possible. The typical entry intersection distance of, for example, 30 mm reduces the illumination at suitable angles of incidence.
[0017] It is an object of the invention to provide a projection exposure system having a reduction objective which functions without problem with reflective reticles.
[0018] The projection exposure system of the invention is for microlithography and includes: a light source; an illuminating system mounted downstream of the light source for transmitting light from the light source as an illuminating beam along an illuminating beam path; a reflective reticle; a reduction objective defining an imaging beam path and being configured for imaging the reticle onto an object; and, a beam splitter cube mounted in the imaging beam path for mutually superposing the illuminating beam path and the imaging beam path.
[0019] According to a feature of the invention, a beam splitter cube functions to superpose the illuminating and imaging beam paths. In this way, numerous objective design concepts for reflective reticles can be adapted as will be shown in the following examples. Erroneous entries by the beam splitter plate are avoided by utilizing a beam splitter cube in lieu of a planar parallel beam splitter plate. The beam splitter plate is operated in passthrough and mounted at 45°.
[0020] According to another feature of the invention, optical elements are provided between the beam splitter cube and the reticle. With these optic elements, it is possible to reduce the angle of incidence of the main beams of the reduction objective on the reticle in such a manner that the incident angle has values between −15 mrad and +15 mrad.
[0021] According to still another feature of the invention, the illuminating system is so configured that the illuminating beam path passes over into the imaging beam path with deviations of less than ±2.5 mrad. This deviation can be measured in that the angles with respect to the reticle plane are determined for the centroidal rays after the reflection and the deviation to the angles of the corresponding chief rays is computed. The angles of the centroidal rays are dependent upon the emission characteristics of the light source and the design of the illuminating system and the angles of the chief ray are exclusively dependent upon the design of the reduction objective.
[0022] According to another feature of the invention, a polarization beam splitter cube is used in order to reduce transmission losses at the beam splitter cube and so that no scattering light is deflected onto the wafer. For an optimal operation, the illuminating light should be linearly polarized to more than 95%. The polarization direction is dependent upon whether the illuminating beam path is intended to be reflected or not at the beam splitter layer. In the case of a reflection, the illuminating light has to be polarized parallel to the beam splitter surface and, in the case of the transmission, the illuminating light has to be polarized perpendicularly to the beam splitter surface.
[0023] In other embodiments of the invention, the beam splitter cube functions exclusively for incoupling the illuminating beam path. To be able to more easily integrate the beam splitter cube into the design of the reduction objective, it is advantageous to subdivide the reduction objective into two component objectives with a first intermediate image having an imaging scale of −1.0±0.25 and a second image having an imaging scale of −0.25±0.15. The beam splitter cube is integrated into the first intermediate image. The second image can be configured to be strictly refractive or catadioptric.
[0024] The coupling in of the illuminating beam path with a beam splitter cube is especially advantageous when the beam splitter cube is already a part of the reduction objective. Then, the fourth unused face of the beam splitter cube can be used to couple in the illuminating beam path.
[0025] If the design of the catadioptric objective includes a deflecting mirror, then the deflecting mirror can be replaced by a beam splitter cube via which the illuminating light is coupled in.
[0026] The design of the catadioptric objective can be configured with or without an intermediate image.
[0027] In another embodiment of the invention, a special beam splitter plate is provided in the projection exposure system. This beam splitter plate is operated in pass through in the illuminating beam path and is operated reflectively in the imaging beam path. Here, reflection in air is provided, that is, in the optically thinner medium which can also be a vacuum or a special gas mixture or a gas such as nitrogen or helium. The beam splitter plate is so configured that astigmatic errors because of the plate mounted at an angle can be refractively corrected.
[0028] The common inventive concept is that the imaging beam path is held free of disturbances by the beam splitter arrangement and the illuminating beam path is corrected with less requirements directly via the beam splitter arrangement. For a beam splitter cube, only rotationally-symmetrical imaging errors are introduced which can be corrected within the illuminating system via rotationally-symmetrical optical elements such as spherical lenses. In the beam splitter plate according to a feature of the invention, the correction of the illuminating beam path is provided by the special configuration of the side of the beam splitter plate facing toward the illuminating system.
[0029] According to still another feature of the invention, the beam splitter plate is provided with a non-planar corrective surface. By mounting the beam splitter plate at an angle, the corrective surface exhibits no rotational symmetry, rather, a simple symmetry with respect to the meridian plane.
[0030] The beam splitter plate is configured to have a wedge shape in accordance with another embodiment of the invention for correcting the astigmatism of the lowest order. The use of a beam splitter plate is especially advantageous when it is used in lieu of a deflecting mirror provided in the design of the reduction objective.
[0031] The superposition of the illuminating optics and the projection optics make possible the use of reflective reticles especially at operating wavelengths in the range from 100 to 200 nm. In this way, the difficulties are avoided which occur in the manufacture of transmission reticles because of machining of the materials transparent at these wavelengths.
[0032] The invention will now be explained with reference to the drawings wherein:
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[0034]
[0035]
[0036]
[0037]
[0038]
[0039]
[0040]
[0041]
[0042] A condition precedent for the arrangement of
[0043] The polarization beam splitter cube
[0044] One can view the optical elements
[0045] The reflective reticle
[0046] In order to simplify the optical configuration of the illuminating optics
[0047] The optical components in the illuminating system
[0048] The illuminating system
[0049] Conventionally, the illuminating system
[0050] The operation of these elements is disclosed, for example, in U.S. patent application Ser. No. 09/315,267, filed May 20, 1999, and incorporated herein by reference. Objectives within the illuminating system
[0051] As a light source, a DUV laser or VUV laser can be used, for example, an ArF laser at 193 nm, a F
[0052]
[0053]
[0054] The incoupling of the illuminating beam path
[0055]
[0056] The first lens group
[0057] If one now uses this objective type with a reflective reticle
[0058] A first λ/4 platelet
[0059] Except for the first λ/4 platelet
[0060] The light of the light source
[0061] In the configuration of the reduction objective
[0062] In
[0063] The remaining imaging errors of higher order can be compensated by a targeted aspherization of the surface
[0064] The deflection mirror
[0065] Coupling in the illuminating light via a polarization beam splitter cube
[0066] The light coming from the illuminating unit
[0067] A first λ/4 platelet
[0068] Optical elements
[0069] A second λ/4 platelet
[0070] The optical elements
[0071] If the polarization beam splitter cube
[0072] One can omit optical elements
[0073] Usually, the object is imaged onto the intermediate image with an imaging scale of β
[0074] A refractive reduction imaging having an imaging scale of, for example, β
[0075] It is also possible to arrange the deflecting mirror
[0076] The diameter of the illuminated field in the wafer plane
[0077] For the embodiment shown in
[0078] The embodiment of
[0079] In Table 1, the surface
[0080] The optical elements
[0081] Table 2 provides the chief ray angles with respect to the surface normal in mrad for seven object heights in the reticle plane
[0082] The adaptation of the centroid ray angles of the illuminating beam path
[0083] The polarization beam splitter cube
[0084] An incoupling of the illuminating light
[0085] It is understood that the foregoing description is that of the preferred embodiments of the invention and that various changes and modifications may be made thereto without departing from the spirit and scope of the invention as defined in the appended claims.
TABLE 1 Surface No. Radius Thickness Mirror Material Reticle ∞ 35.000 1 ∞ 0.000 2 ∞ 10.000 SiO2 3 −356.062 157.474 4 452.317 20.000 SiO2 5 −207.509 15.494 6 ∞ 46.000 SiO2 7 ∞ −46.00 S SiO2 8 ∞ −11.450 9 714.294 −10.000 SiO2 10 −233.153 −14.054 11 11257.823 −7.320 SiO2 12 5681.927 −0.268 13 −294.458 −29.996 SiO2 14 2624.912 −21.086 15 118.550 −6.001 SiO2 16 372.661 −9.646 17 89.532 −6.000 SiO2 18 220.679 −3.804 19 134.415 3.804 S 20 220.679 6.000 SiO2 21 89.532 9.646 22 372.661 6.001 SiO2 23 118.550 21.086 24 2624.912 29.996 SiO2 25 −294.458 0.268 26 5681.927 7.320 SiO2 27 11257.823 14.054 28 −233.153 10.000 SiO2 29 714.294 11.450 30 ∞ 46.000 SiO2 31 ∞ 46.000 SiO2 32 ∞ 0.000 33 ∞ 11.000 34 −6197.721 20.000 SiO2 35 −220.469 289.683 36 ∞ −35.000 S 37 −283.115 −27.145 SiO2 38 291.549 −0.100 39 −169.090 −13.856 SiO2 40 −2565.582 −24.512 41 380.926 −6.000 SiO2 42 3955.807 −18.476 43 360.725 −6.000 SiO2 44 890.059 −2.724 45 −179.574 −11.560 SiO2 46 −339.907 −16.696 47 −147.863 −16.313 SiO2 48 −65.738 18.352 49 103.683 −7.718 SiO2 50 197.447 −2.785 51 111.947 −15.000 SiO2 52 106.337 −38.908 53 −152.812 −22.411 SiO2 54 194.070 −0.375 55 −199.667 −7.318 SiO2 56 −93.343 −30.485 57 89.838 −7.125 SiO2 58 197.820 −35.859 59 −713.001 −13.228 SiO2 60 274.158 −0.375 61 −106.260 −6.375 SiO2 62 −76.991 −18.206 63 −207.243 −16.125 SiO2 64 265.977 −0.375 65 −105.982 −6.938 SiO2 66 −70.150 −5.070 67 −110.355 −11.250 SiO2 68 −337.355 −1.500 69 ∞ 0.000 70 −83.054 −13.500 SiO2 71 −64.019 −0.100 72 −60.890 −13.500 SiO2 73 −102.440 −0.101 74 −65.466 −8.393 SiO2 75 −75.287 −0.523 76 −74.115 −10.249 SiO2 77 −48.411 −4.972 78 −70.661 −26.250 SiO2 79 135.365 −0.038 80 −38.281 −23.828 CaF2 81 −41.066 −0.038 82 −46.927 −9.292 CaF2 83 187.500 −5.625 Wafer ∞ 0.000
[0086]
TABLE 2 Object Height at Reticle Chief Ray Angle at Reticle (mm) (mrad) 28.7 +0.29 26.8 +0.36 24.9 +0.41 20.3 +0.49 14.4 +0.47 10.1 +0.38 0.0 +0.00